LD 242
GaAs-IR-Lumineszenzdiode
GaAs Infrared Emitter
2001-09-12
1
Wesentliche Merkmale
Hergestellt im Schmelzepitaxieverfahren
Kathode galvanisch mit dem Gehuseboden
verbunden
Hohe Zuverlssigkeit
Groer ffnungskegel
Gehusegleich mit BP 103, BPX 63, SFH 464,
SFH 483
Anwendungsklasse nach DIN 40 040 GQC
Anwendungen
Lichtschranken fr Gleich- und
Wechsellichtbetrieb
IR-Gertefernsteuerungen
Sensorik
Lichtgitter
Typ
Type
Bestellnummer
Ordering Code
Gehuse
Package
LD 242
Q62703-Q151
Bodenplatte nach 18 A3 DIN 41876 (TO-18), klares
Epoxy-Gieharz, linsenfrmig, Anschlsse im
2.54-mm-Raster (
1
/
10
'')
Base plate as per 18 A3 DIN 41876 (TO-18), transparent
epoxy resin lens, solder tabs lead spacing 2.54 mm (
1
/
10
'')
LD 242-2/3
Q62703-Q4749
LD 242 E7800
Q62703-Q3509
Features
Fabricated in a liquid phase epitaxy process
Cathode is electrically connected to the case
High reliability
Wide beam
Same package as BP 103, BPX 63, SFH 464,
SFH 483
DIN humidity caregory in acc. with
DIN 40 040 GQG
Applications
Photointerrupters
IR remote control of various equipmet
Sensor technology
Light-grille barrier
2001-09-12
2
LD 242
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40
...
+ 80
C
Sperrspannung
Reverse voltage
V
R
5
V
Durchlastrom,
T
C
= 25
C
Forward current
I
F
300
mA
Stostrom,
10
s,
D
= 0
Surge current
I
FSM
3
A
Verlustleistung,
T
C
= 25
C
Power dissipation
P
tot
470
mW
Wrmewiderstand
Thermal resistance
R
thJA
R
thJC
450
160
K/W
K/W
Kennwerte (
T
A
= 25
C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenlnge der Strahlung
Wavelength at peak emission
I
F
= 100 mA,
t
p
= 20 ms
peak
950
nm
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F
= 100 m A,
t
p
= 20 ms
55
nm
Abstrahlwinkel
Half angle
40
Grad
deg.
Aktive Chipflche
Active chip area
A
0.25 mm
2
Abmessungen der aktiven Chipflche
Dimension of the active chip area
L
B
L
W
0.5
0.5
mm
Abstand Chipoberflche bis Linsenscheitel
Distance chip surface to lens top
H
0.3
...
0.7
mm
LD 242
2001-09-12
3
Schaltzeiten,
I
e
von 10% auf 90% und von 90%
auf 10%, bei
I
F
= 100 mA,
R
L
= 50
Switching times,
I
e
from 10% to 90% and from
90% to 10%,
I
F
= 100 mA,
R
L
= 50
t
r
,
t
f
1
s
Kapazitt
Capacitance
V
R
= 0 V
C
o
40
pF
Durchlaspannung
Forward voltage
I
F
= 100 mA
I
F
= 1 A,
t
p
= 100
s
V
F
V
F
1.3 (
1.5)
1.9 (
2.5)
V
V
Sperrstrom,
V
R
= 5 V
Reverse current
I
R
0.01 (
1)
A
Gesamtstrahlungsflu
Total radiant flux
I
F
= 100 mA,
t
p
= 20 ms
e
16
mW
Temperaturkoeffizient von
I
e
bzw.
e
,
I
F
= 100 mA
Temperature coefficient of
I
e
or
e
,
I
F
= 100 mA
TC
I
0.55
%/K
Temperaturkoeffizient von
V
F
,
I
F
= 100 mA
Temperature coefficient of
V
F
,
I
F
= 100 mA
TC
V
1.5
mV/K
Temperaturkoeffizient von
peak
,
I
F
= 100 mA
Temperature coefficient of
peak
,
I
F
= 100 mA
TC
0.3
nm/K
Kennwerte (
T
A
= 25
C)
Characteristics (cont'd)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
2001-09-12
4
LD 242
Gruppierung der Strahlstrke
I
e
in Achsrichtung
gemessen bei einem Raumwinkel
= 0.01 sr
Grouping of Radiant Intensity
I
e
in Axial Direction
measured at a solid angle of
= 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
-2
-3
7800
1)
Strahlstrke
Radiant intensity
I
F
= 100 mA,
t
p
= 20 ms
I
F
= 1 A,
t
p
= 100
s
I
e
I
e typ.
4
...
8
50
> 6.3
75
1
...
3.2
mW/sr
mW/sr
1)
Die Messung der Strahlstrke und des Halbwinkels erfolgt mit einer Lochblende vor dem Bauteil (Durchmesser der
Lochblende: 1.1 mm; Abstand Lochblende zu Gehuserckseite: 4.0 mm). Dadurch wird sichergestellt, da bei der
Strahlstrkemessung nur diejenige Strahlung in Achsrichtung bewertet wird, die direkt von der Chipoberflche
austritt. Von der Bodenplatte reflektierte Strahlung (vagabundierende Strahlung) wird dagegen nicht bewertet. Diese
Reflexionen sind besonders bei Abbildungen der Chipoberflche ber Zusatzoptiken strend (z.B. Lichtschranken
groer Reichweite). In der Anwendung werden im allgemeinen diese Reflexionen ebenfalls durch Blenden
unterdrckt. Durch dieses, der Anwendung entsprechende Meverfahren ergibt sich fr die Anwender eine besser
verwertbare Gre. Diese Lochblendenmessung ist gekennzeichnet durch den Eintrag ,,E 7800", der an die
Typenbezeichnung angehngt ist.
1)
An aperture is used in front of the component for measurement of the radiant intensity and the half angle (diameter
of the aperture: 1.1 mm; distance of aperture to case back side: 4 mm). This ensures that solely the radiation in axial
direction emitting directly from the chip surface will be evaluated during measurement of the radiant intensity.
Radiation reflected by the bottom plate (stray radiation) will not be evaluated. These reflections impair the projection
of the chip surface by additional optics (e.g. long-range light reflection switches). In respect of the application of the
component, these reflections are generally suppressed by apertures as well. This measuring procedure
corresponding with the application provides more useful values. This aperture measurement is denoted by "E 7800"
added to the type designation.
LD 242
2001-09-12
5
Relative Spectral Emission
I
rel
=
f
(
)
Forward Current
I
F
=
f
(
V
E
)
Radiation Characteristics
I
rel
=
f
(
)
OHR01938
rel
0
880
920
960
1000
nm
1060
20
40
60
80
%
100
V
OHR01040
F
F
1
1
10
0
10
-1
10
10
-2
A
1.5
2
2.5
3
3.5
4
4.5
typ.
max.
V
OHR01877
0
20
40
60
80
100
120
0.4
0.6
0.8
1.0
100
90
80
70
60
50
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
Radiant Intensity
Single pulse,
t
p
= 20
s
Permissible Pulse Handling
Capability
I
F
=
f
(
),
T
C
= 25
C,
duty cycle
D
= parameter
I
e
I
e
100 mA
=
f
(
I
F
)
OHR01037
F
-1
10
10
0
1
10
2
10
10
-2
-1
10
0
10
A
10
1
e
e
(100 mA)
OHR01937
10
-5
s
10
2
F
mA
10
-4
10
-3
10
-2
10
0
10
3
10
4
5
5
DC
0.5
0.05
0.02
0.01
0.005
D =
0.1
F
T
P
t
=
D
P
t
T
0.2
Max. Permissible Forward Current
I
F
=
f
(
T
A
)
T
OHR00971
A
0
F
0
20
40
60
80
100
C
50
100
150
200
250
mA
300
, T
L
= 160 K/W
thJL
R
R
thJA
= 450 K/W
2001-09-12
6
LD 242
Mazeichnung
Package Outlines
Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch).
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
All Rights Reserved.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
, may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component usedin a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
4.3 (0.169)
4.1 (0.161)
Chip position
3.6 (0.142)
3.0 (0.118)
2.54 (0.100)
spacing
GETY6625
Approx. weight 0.5 g
1
Anode
Cathode (SFH 483)
(LD 242, BPX 63, SFH 464)
14.5 (0.571)
12.5 (0.492)
0.45 (0.018)
2.7 (0.106)
0.9 (0.035)
1.1 (0.043)
0.9 (0.035)
1.1 (0.043)
5.5 (0.217)
5.2 (0.205)
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