SFH 4650
SFH 4655
Engwinklige LED in MIDLED-Geh
use
Narrow beam LED in MIDLED package
Lead (Pb) Free Product - RoHS Compliant
SFH 4650
SFH 4655
2005-03-08
1
Vorl
ufige Daten / Preliminary Data
Wesentliche Merkmale
Infrarot LED mit hoher Ausgangsleistung
(40 mW)
Emissionswellenl
nge typ. 850 nm
Enger Abstrahlwinkel ( 20
)
geringe Bauh
he
Als Toplooker und Sidelooker einsetzbar
SFH 4650: Gurtung als Toplooker
SFH 4655: Gurtung als Sidelooker
Anwendungen
Infrarotbeleuchtung f
r CMOS Kameras
IR-Daten
bertragung
Sensorik in der Automobiltechnik
Fernsteuerung
Sicherheitshinweise
Je nach Betriebsart emittieren diese Bauteile
hochkonzentrierte, nicht sichtbare Infrarot-
Strahlung, die gef
hrlich f
r das menschliche
Auge sein kann. Produkte, die diese Bauteile
enthalten, m
ssen gem
den Sicherheits-
richtlinien der IEC-Norm 60825-1 behandelt
werde
n.
Typ
Type
Bestellnummer
Ordering Code
Strahlst
rkegruppierung (
I
F
= 100 mA,
t
p
= 20 ms)
Radiant Intensity Grouping
I
e
(mW/sr)
SFH 4650
Q65110A1572
>16 (typ. 40)
SFH 4655
Q65110A1569
>16 (typ. 40)
Features
High Power (40 mW) Infrared LED
Peak wavelength typ. 850 nm
Narrow halfangle ( 20
)
low profile component
Usable as top-looking and side-looking device
SFH 4650: Taping as Toplooker
SFH 4655: Taping as Sidelooker
Applications
Infrared Illumination for CMOS cameras
IR Data Transmission
Automotive sensors
Remote controls
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1
"
Safety of laser products
"
.
2005-03-08
2
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
Grenzwerte (
T
A
= 25 C)
Maximum Ratings
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range
T
op
;
T
stg
40
+ 100
C
Sperrspannung
Reverse voltage
V
R
5
V
Durchlassstrom
Forward current
I
F
100
mA
Sto
strom,
10 s,
D
= 0
Surge current
I
FSM
1
A
Verlustleistung
Power dissipation
P
tot
180
mW
W
rmewiderstand Sperrschicht
1)
Thermal resistance junction
R
thJA
340
K/W
W
rmewiderstand Sperrschicht
2)
Thermal resistance junction
R
thJS
180
K/W
1)
Umgebung bei Montage auf FR4 Platine, Padgr
e je 16 mm
2
ambient mounted on PC-board (FR4), padsize 16 mm
2
each
2)
L
tstelle bei Montage auf Metall-Block
soldering point, mounted on metal block
Kennwerte (
T
A
= 25 C)
Characteristics
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
Wellenl
nge der Strahlung
Wavelength at peak emission
I
F
= 100 mA
peak
850
nm
Spektrale Bandbreite bei 50% von
I
max
Spectral bandwidth at 50% of
I
max
I
F
= 100 mA
35
nm
Abstrahlwinkel
Half angle
20
Grad
deg.
ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
2005-03-08
3
Aktive Chipfl
che
Active chip area
A
0.09
mm
2
Abmessungen der aktiven Chipfl
che
Dimension of the active chip area
L B
L W
0.3
0.3
mm
Schaltzeiten,
I
e
von 10% auf 90% und von 90%
auf 10%, bei
I
F
= 100 mA,
R
L
= 50
Switching times,
e
from 10% to 90% and from
90% to 10%,
I
F
= 100 mA,
R
L
= 50
t
r
,
t
f
12
ns
Durchlassspannung
Forward voltage
I
F
= 100 mA,
t
p
= 20 ms
I
F
= 1 A,
t
p
= 100
s
V
F
V
F
1.5 ( 1.8)
2.4 (< 3.0)
V
V
Sperrstrom
Reverse current
V
R
= 3 V
I
R
0.01 ( 10)
A
Gesamtstrahlungsfluss
Total radiant flux
I
F
= 100 mA,
t
p
= 20 ms
e
40
mW
Temperaturkoeffizient von
I
e
bzw.
e
,
I
F
= 100 mA
Temperature coefficient of
I
e
or
e
,
I
F
= 100 mA
TC
I
0.5
%/K
Temperaturkoeffizient von
V
F
,
I
F
= 100 mA
Temperature coefficient of
V
F
,
I
F
= 100 mA
TC
V
0.7
mV/K
Temperaturkoeffizient von ,
I
F
= 100 mA
Temperature coefficient of ,
I
F
= 100 mA
TC
+ 0.2
nm/K
Kennwerte (
T
A
= 25 C)
Characteristics (cont
'
d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
2005-03-08
4
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
Strahlst
rke I
e
in Achsrichtung
1)
gemessen bei einem Raumwinkel = 0.01 sr
Radiant Intensity I
e
in Axial Direction
at a solid angle of = 0.01 sr
Bezeichnung
Parameter
Symbol
Werte
Values
Einheit
Unit
-S
-T
-U
Strahlst
rke
Radiant intensity
I
F
= 100 mA,
t
p
= 20 ms
I
e min
I
e max
16
32
25
50
40
80
mW/sr
mW/sr
Strahlst
rke
Radiant intensity
I
F
= 1 A,
t
p
= 100 s
I
e typ
200
250
300
mW/sr
1)
Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1)
1)
Only one group in one packing unit, (variation lower 2:1)
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
2005-03-08
5
Relative Spectral Emission
I
rel
=
f
( )
Max. Permissible Forward Current
I
F
=
f
(
T
A
);
R
thJA
= 450 K/W
1)
Radiation Characteristics
I
rel
=
f
( )
700
0
nm
%
OHL01714
20
40
60
80
100
950
750
800
850
I
rel
40
20
0
0
100
80
60
T
I
F
mA
OHF02533
A
10
20
30
40
50
60
70
80
90
110
OHF02432
0.4
0.6
0.8
1.0
0
0.2
0.4
0.6
0.8
1.0
Radiant Intensity
Single pulse,
t
p
= 20 s
Permissible Pulse Handling
Capability
I
F
=
f
(
t
p
),
T
A
= 25 C
duty cycle
D
= parameter
I
e
I
e
100 mA
=
f
(
I
F
)
OHL01715
10
-3
mA
10
1
0
10
5
5
10
-1
-2
5
10
e
e (100 mA)
I
I
I
F
0
10
1
10
2
10
3
10
5
5
0.05
2
1
0
-1
-2
-3
-4
-5
10
10
10
10
10
t
p
10
10
s
10
0
0.1
0.005
0.02
0.01
D
=
T
t
A
I
F
D
=
I
P
T
F
P
t
OHF02532
0.2
0.5
1
0.2
0.4
0.6
0.8
1.0
1.2
Forward Current
I
F
=
f
(
V
F
)
Single pulse,
t
p
= 20 s
1)
mounted on PC board FR 4
(pad size 16 mm
2
)
OHL01713
F
I
10
-4
0.5
1
1.5
2
2.5 V 3
10
0
A
0
F
V
-1
10
5
5
10
-2
-3
5
10
2005-03-08
6
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
Ma
zeichnung
Package Outlines
Ma
e werden in mm angegeben. Dimensions are specified in mm.
Geh
use
package
MID mit klarem Silikonverguss
MID casted with clear Silicone
Anschlussbelegung
Pin configuration
Pad 1 = Anode/ anode
Pad 2 = Kathode / cathode
OHF02423
(1.2)
Isolating area
metallisation
Pad 2
Pad 1
metallisation
(0.8)
1.7
1.5
0.65
0.45
0.65
0.45
3.3
2.9
metallisation
Backside
Silicone area
1)
Device casted with silicone.
1)
Avoid mechanical stress on silicone surface.
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
2005-03-08
7
Empfohlenes L
tpaddesign
Recommended Solderpad Design
Bauteil positioniert
Component location on pad
1.7
OHF02421
Solder resist
Paddesign for improved
heat dissipation
Cu-area
2
OHF02422
2.4
heat dissipation
Solder resist
Paddesign for improved
Cu-area
2
Component location on pad
Bauteil positioniert
2005-03-08
8
Vorl
ufige Daten / Preliminary Data
SFH 4650, SFH 4655
L
tbedingungen
Vorbehandlung nach JEDEC Level 2
Soldering Conditions
Preconditioning acc. to JEDEC Level 2
IR-Reflow L
tprofil f
r bleifreies L
ten
(nach J-STD-020B)
IR Reflow Soldering Profile for lead free soldering
(acc. to J-STD-020B)
Verarbeitungshinweis: Das Geh
use ist mit Silikon vergossen. Mechanischer Stre
auf der
Bauteiloberfl
che sollte so gering wie m
glich gehalten werden.
Handling indication:
The package is casted with silicone. Mechanical stress at the surface of
the unit should be as low as possible.
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recycling operators known to you. We can also help you
get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components
1
may only be used in life-support devices or systems
2
with the express written approval of OSRAM OS.
1
A critical component is a component used in a life-support device or system whose failure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2
Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.
OHLA0687
0
0
T
t
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50
100
150
200
250
300
Ramp Down
6 K/s (max)
3 K/s (max)
30 s max
Maximum Solder Profile
Recommended Solder Profile
Minimum Solder Profile
10 s min
min. condition for IR Reflow Soldering:
solder point temperature 235
C for at least 10 sec.
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