SPL EBxx
Actively Cooled Diode Laser Stack 25
...
100 W cw, Both Axes Collimated
2002-06-15
1
Features
Both axes collimated linear stack, actively
cooled, for cw operation
Highly reliable strained layer InGa(Al)As/GaAs
material with MTTF life time > 10000 h
Low thermal resistance using mini coolers
Sealed housing with desiccating cell
Modular stack design, integration of up to
4 bars
Bar replacement capability for repair /
upgrading
Type
Wavelength
1)
1)
Other wavelengths in the range of 780 nm ... 980 nm are available on request.
Bar Count (n)
Power
Ordering Code
SPL EB81-F
SPL EB81-I
SPL EB81-K
SPL EB81-L
808 nm
1
2
3
4
28 W
56 W
84 W
112 W
on request
SPL EB94-G,
SPL EB94-J
SPL EB94-L
SPL EB94-M
940 nm
1
2
3
4
35 W
70W
105W
140 W
on request
SPL EB98-G,
SPL EB98-J,
SPL EB98-L,
SPL EB98-M
975 nm
1
2
3
4
35 W
70 W
105W
140 W
on request
Applications
End pumping of rods and fibers
Direct material processing, soldering
Marking, surface processing
Medical applications
Safety Advices
Depending on the mode of operation, these
devices emit highly concentrated non visible
infrared light which can be hazardous to the
human eye. Products which incorporate these
devices have to follow the safety precautions
given in IEC 60825-1 "Safety of laser products".
2002-06-15
2
SPL EBxx
Maximum Ratings (
T
A
= 20
C mount temperature)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Number of bars
n
1
...
4
Output power (continuous wave) per bar
1)
P
cw
28
35
W
Operating coolant temperature
2)
T
op
+ 10
+ 40
C
Storage temperature
2)
T
stg
- 20
+ 70
C
Maximum coolant pressure
P
max
5
bar
1)
Standard operating conditions refer to 28 W at 808 nm and 35 W at 940 nm cw collimated optical output power per
bar at 20
C using pure water as coolant (resistivity > 0.2 M
cm, using particle filter of 30
m, and 0.5 l/min per bar
flow rate).
2)
Condensation must be avoided (> 10K above dew point).
SPL EBxx
2002-06-15
3
Diode Characteristics (
T
A
= 20
C mount temperature)
Parameter
Symbol
Values
Unit
min.
typ.
max.
Emission wavelengths
808
940
975
nm
Spectral width (FWHM)
1)
4
nm
Threshold current
at 808 nm
I
th
16
A
at 940 nm, and 975 nm
12
14
Differential efficiency (per bar)
1)
d
0.75
0.85
W/A
Operating current
1)
I
op
52
60
A
Operating voltage (per bar)
1)
V
op
1.75
V
Operating voltage
1)
V
op
1.75
V
Overall efficiency
1)
28
32
35
%
Emitting aperture
H
n
4
mm
W
12
mm
Beam divergence
1) 2)
||
15
20
20
25
mrad
Temperature coefficient of wavelength
/
T
0.27
nm/K
Temperature coefficient of operating current
I
op
/
I
op
T
0.5
%/K
Coolant flow rate (per bar)
1)
dV
/
dt
0.35
0.5
l/min
Pressure drop
1)
p
1.5
3.0
bar
1)
Standard operating conditions refer to 25 W at 808 nm and 30 W at 940 nm cw collimated optical output power per
bar with water coolant at 20
C.
2)
Far field divergence refers to half angle at 1/e
2
relative intensity.
SPL EBxx
2002-06-15
5
Package Outlines
Dimensions are specified as follows: mm (inch).
For safety, unpacking, handling, mounting and operating issues, please carefully read our "Notes For
Operation
II
".
GWOY6035
+
-
2 x
3 (0.118) H7 / 4 deep
3 (0.118)
16.9 (0.665)
25.5 (1.004)
48 (1.890)
Water IN
Water OUT
5 (0.197)
8 (0.315) / 0.2 deep
Tapped for
O-ring 6 (0.236) x 1 (0.039)
1) 2)
37 (1.457)
16 (0.630)
32.5 (1.280)
Laser Beam Height
10 (0.394)
M4 (0.157)
Contact (+ and -)
M3 (0.118) x 40 (1.575)
3)
16 (0.630)
28 (1.102)
34 (1.339)
6 (0.236)
15 (0.591)
60 (2.362)
30 (1.181)
Negative electrical
terminal
terminal
Positive electrical
Ground plate 0.5 (0.020) tapped
O-ring material EPDM
Alternative DIN 84 - M3 (0.118) x 40 (1.575)
1)
2)
3)
16 (0.630)
Laser beam width
X
56 (2.205)
4 x Screw DIN912 -
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