Transistors
1
Publication date: March 2003
SJC00003BED
2SA0720A
(2SA720A)
Silicon PNP epitaxial planar type
For low-frequency driver amplification
Complementary to 2SC1318A
Features
High collector-emitter voltage (Base open) V
CEO
Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-80
V
Collector-emitter voltage (Base open)
V
CEO
-70
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
- 0.5
A
Peak collector current
I
CP
-1
A
Collector power dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-80
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-70
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1
A
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= -10 V, I
C
= -150 mA
85
240
h
FE2
V
CE
= -10 V, I
C
= -500 mA
40
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= -300 mA, I
B
= -30 mA
- 0.2
- 0.6
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= -300 mA, I
B
= -30 mA
- 0.85 -1.50
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
120
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25C 3C
5.0
0.2
0.7
0.1
0.45
+0.15
0.1
2.5
+0.6
0.2
0.45
+0.15
0.1
2.5
1
2 3
+0.6
0.2
4.0
0.2
5.1
0.2
12.9
0.5
2.3
0.2
0.7
0.2
Rank
Q
R
h
FE1
85 to 170
120 to 240
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurment
*2: Rank classification
Note) The part number in the parenthesis shows conventional part number.
2SA0720A
2
SJC00003BED
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
ob
V
CB
I
CEO
T
a
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
0
160
40
120
80
0
800
600
200
400
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
-10
-8
-2
-6
-4
0
-1.2
-1.0
- 0.8
- 0.6
- 0.4
- 0.2
T
a
= 25C
I
B
= -10 mA
-9 mA
-8 mA
-7 mA
-6 mA
-5 mA
-4 mA
-3 mA
-2 mA
-1 mA
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0
-10
-8
-2
-6
-4
0
-1.2
-1.0
- 0.8
- 0.6
- 0.4
- 0.2
V
CE
= -10 V
T
a
= 25C
Base current I
B
(mA)
Collector current I
C
(A
)
-1
-10
-100
-1000
- 0.001
- 0.01
- 0.1
-1
-10
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
-1
-10
-100
-1000
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
T
a
= -25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(mA)
-1
-10
-100
-1000
0
300
250
200
150
100
50
V
CE
= -10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1
10
100
0
200
160
120
80
40
V
CB
= -10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-1
-10
-100
0
50
40
30
20
10
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0
120
40
160
80
1
10
10
2
10
3
10
4
V
CB
= -20 V
Ambient temperature T
a
(
C)
I
CBO
(T
a
)
I
CBO
(T
a
=
25
C
)
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2002 JUL
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