Power Transistors
1
Publication date: March 2003
SJD00018BED
2SB0937
(2SB937)
, 2SB0937A
(2SB937A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1260, 2SD1260A
Features
High forward current transfer ratio h
FE
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0937
V
CBO
-60
V
(Emitter open)
2SB0937A
-80
Collector-emitter voltage 2SB0937
V
CEO
-60
V
(Base open)
2SB0937A
-80
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-2
A
Peak collector current
I
CP
-4
A
Collector power dissipation
P
C
35
W
T
a
= 25C
1.3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0937
V
CEO
I
C
= -30 mA, I
B
= 0
-60
V
(Base open)
2SB0937A
-80
Base-emitter voltage
V
BE
V
CE
=
-4 V,I
C
=
-2 A
-2.8
V
Collector-base cutoff
2SB0937
I
CBO
V
CB
=
-60 V,I
E
= 0
-1
mA
current (Emitter open)
2SB0937A
V
CB
=
-80 V,I
E
= 0
-1
Collector-emitter cutoff
2SB0937
I
CEO
V
CE
=
-30 V,I
B
= 0
-2
mA
current (Base open)
2SB0937A
V
CE
=
-40 V,I
B
= 0
-2
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
=
-5 V,I
C
= 0
-2
mA
Forward current transfer ratio
h
FE1
V
CE
= -4 V, I
C
= -1 A
1 000
h
FE2
*
V
CE
= -4 V, I
C
= -2 A
2 000
10 000
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -2 A, I
B
= -8 mA
-2.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= -0.5 A, f = 1 MHz
20
MHz
Turn-on time
t
on
I
C
= -2 A,
0.4
s
Strage time
t
stg
I
B1
= -8 mA, I
B2
= 8 mA
1.5
s
Fall time
t
f
V
CC
= -50 V
0.5
s
8.5
0.2
3.4
0.3
1.0
0.1
0 to 0.4
6.0
0.2
0.8
0.1
R = 0.5
R = 0.5
1.0
0.1
0.4
0.1
(8.5)
(6.5)
(6.0)
1.3
(1.5)
(7.6)
2.54
0.3
1.4
0.1
5.08
0.5
1
2
3
1.5
0.1
2.0
0.5
10.0
0.3
1.5
+0 0.4
3.0
+0.4 0.2
4.4
0.5
4.4
0
.
5
14.4
0.5
Rank
Q
P
h
FE1
2 000 to 5 000 4 000 to 10 000
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
B
C
E
Note) The part number in the parenthesis shows conventional part number.
2SB0937, 2SB0937A
2
SJD00018BED
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
0
160
40
120
80
0
10
20
30
40
50
(1)T
C
=Ta
(2)With a 50
502mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
-1
-2
-3
-5
-4
0
-5
-1
-2
-4
-3
T
C
=25C
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.2mA
0.1mA
4.0mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0
-3.2
- 0.8
-2.4
-1.6
0
-2
-4
-6
-8
-10
V
CE
=4V
25C
T
C
=100C
25C
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
- 0.01
- 0.01
- 0.1
-1
-10
-100
- 0.1
-1
-10
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=250
25C
25C
T
C
=100C
- 0.01
- 0.1
-1
-10
10
10
2
10
3
10
4
10
5
V
CE
=4V
T
C
=100C
25C
25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
- 0.1
-1
-10
-100
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
-1
- 0.1
-
1
-10
-100
-10
-100
-1 000
Non repetitive pulse
T
C
=25C
t=10ms
t=1ms
I
CP
I
C
t=300ms
2SB0937A
2SB0937
Safe operation area
R
th
t
10
-2
10
-1
1
10
10
3
10
2
10
-4
10
4
10
3
10
2
10
1
10
-1
10
-2
10
-3
Time t (s)
Thermal resistance R
th
(
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 50
502mm Al heat sink
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
PDF 
ZIP