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Электронный компонент: 2SB0940A2SB940A

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Power Transistors
1
Publication date: February 2003
SJD00021BED
2SB0940
(2SB940)
, 2SB0940A
(2SB940A)
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
Complementary to 2SD1264, 2SD1264A
Features
High collector-emitter voltage (Base open) V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-200
V
Collector-emitter voltage 2SB0940
V
CEO
-150
V
(Base open)
2SB0940A
-180
Emitter-base voltage (Collector open)
V
EBO
-6
V
Collector current
I
C
-2
A
Peak collector current
I
CP
-3
A
Collector power
P
C
30
W
dissipation
T
a
= 25C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -50 A, I
E
= 0
-200
V
Collector-emitter voltage
2SB0940
V
CEO
I
C
= -5 mA, I
B
= 0
-150
V
(Base open)
2SB0940A
-180
Emitter-base voltage (Collector open)
V
EBO
I
E
= -500 A, I
C
= 0
-6
V
Base-emitter voltage
V
BE
V
CE
= -10 V, I
C
= -400 mA
-1
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -200 V, I
E
= 0
-50
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -4 V, I
C
= 0
-50
A
Forward current transfer ratio
h
FE1
*
V
CE
= -10 V, I
C
= -150 mA
60
240
h
FE2
V
CE
= -10 V, I
C
= -400 mA
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
-1
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 10 MHz
30
MHz
Note) The part numbers in the parenthesis show conventional part number.
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2SB0940, 2SB0940A
2
SJD00021BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
I
C
V
BE
Safe operation area
R
th
t
0
160
40
120
80
0
10
20
30
40
50
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
(1)T
C
=Ta
(2)With a 100
1002mm
Al heat sink
(3)With a 50
502mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
0
0
-12
-2
-10
-4
-8
-6
-600
-500
-400
-300
-200
-100
T
C
=25C
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
I
B
=4.5mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0
-1.0
- 0.8
- 0.6
- 0.4
- 0.2
0
- 0.4
- 0.8
-1.2
-2.0
-1.6
T
C
=100C
25C
25C
V
CE
=10V
Base-emitter voltage V
BE
(V)
Collector current I
C
(A)
- 0.01
- 0.01
- 0.1
-1
-10
- 0.1
-1
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
T
C
=100C
25C
25C
- 0.01
- 0.1
-1
-10
1
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
10
2
10
4
10
3
V
CE
=10V
T
C
=100C
25C
25C
- 0.01
- 0.1
-1
-10
1
10
Transition frequency f
T
(MHz)
Collector current I
C
(A)
10
2
10
4
10
3
V
CE
=10V
f=10MHz
T
C
=25C
- 0.01
-1
- 0.1
-1
-10
-100
-10
-100
-1 000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
t=0.5ms
t=5ms
t=1ms
I
CP
I
C
2SB0940A
2SB0940
Non repetitive pulse
T
C
=25C
DC
10
-2
10
-1
1
10
10
3
10
2
10
4
10
3
10
2
10
1
10
-1
10
-2
10
-3
Time t (s)
Thermal resistance R
th
(

C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100
1002mm Al heat sink
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2002 JUL