Power Transistors
97
2SB0948, 2SB0948A
(2SB948, 2SB948A)
Silicon PNP epitaxial planar type
For low-voltage switching
Complementary to 2SD1445 and 2SD1445A
I
Features
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package which can be installed to the heat sink with one
screw
I
Absolute Maximum Ratings
T
C
= 25C
Unit: mm
I
Electrical Characteristics
T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector to base
2SB0948
V
CBO
-40
V
voltage
2SB0948A
-50
Collector to
2SB0948
V
CEO
-20
V
emitter voltage
2SB0948A
-40
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-20
A
Collector current
I
C
-10
A
Collector power
T
C
= 25
C
P
C
40
W
dissipation
T
a
= 25
C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
-40 V, I
E
= 0
-50
A
Emitter cutoff current
I
EBO
V
EB
=
-5 V, I
C
= 0
-50
A
Collector to emitter
2SB0948
V
CEO
I
C
=
-10 mA, I
B
= 0
-20
V
voltage
2SB0948A
-40
Forward current transfer ratio
h
FE1
V
CE
=
-2 V, I
C
=
- 0.1 A
45
h
FE2
*
V
CE
=
-2 V, I
C
=
-3 A
90
260
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
-10 A, I
B
=
- 0.33 A
- 0.6
V
Base to emitter saturation voltage
V
BE(sat)
I
C
=
-10 A, I
B
=
- 0.33 A
-1.5
V
Transition frequency
f
T
V
CE
=
-10 V, I
C
=
- 0.5 A, f = 10 MHz
100
MHz
Collector output capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1 MHz
400
pF
Turn-on time
t
on
I
C
=
-3 A, I
B1
=
- 0.1 A, I
B2
= 0.1 A
0.1
s
Storage time
t
stg
0.5
s
Fall time
t
f
0.1
s
Rank
Q
P
h
FE2
90 to 180
130 to 260
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F-A1 Package
Note) *: Rank classification
Note.) The Part numbers in the Parenthesis show conventional part number.
Power Transistors
98
2SB0948, 2SB0948A
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
12
10
8
6
4
2
T
C
=25C
80mA
60mA
50mA
40mA
35mA
20mA
15mA
30mA
25mA
10mA
5mA
I
B
=100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
0.3
3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=30
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
V
CE
=2V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
7
1
5
3
0.01
10
1
0.1
0.03
0.3
3
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(I
B1
=I
B2
)
V
CC
=20V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
10ms
I
CP
I
C
2SB0948A
2SB0948
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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2001 MAR
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