1
Power Transistors
2SB1502
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD2275
s
Features
q
Optimum for 55W HiFi output
q
High foward current transfer ratio h
FE
: 5000 to 30000
q
Low collector to emitter saturation voltage V
CE(sat)
: < 2.5V
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
100
5
8
5
60
3.5
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 120V, I
E
= 0
V
CE
= 100V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 4mA
I
C
= 4A, I
B
= 4mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 4mA, I
B2
= 4mA,
V
CC
= 50V
min
100
2000
5000
typ
20
1.0
0.8
1.0
max
100
100
100
30000
2.5
3.0
Unit
A
A
A
V
V
V
MHz
s
s
s
T
C
=25
C
Ta=25
C
Unit: mm
Internal Connection
B
C
E
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
5000 to 15000 7000 to 21000 8000 to 30000
1:Base
2:Collector
3:Emitter
TOP3L Package
20.0
0.5
6.0
10.0
26.0
0.5
20.0
0.5
1.5
2.5
Solder Dip
10.9
0.5
1
2
3
2.0
0.3
3.0
0.3
1.0
0.2
5.0
0.3
3.0
4.0
2.0
5.45
0.3
0.6
0.2
1.5
2.7
0.3
1.5
2.0
3.3
0.2
3.0
2
Power Transistors
2SB1502
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
80
60
20
50
70
40
10
30
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.5W)
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25C
0.1mA
0.2mA
0.3mA
0.4mA
I
B
= 0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
25C
25C
T
C
=100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0.1
100
10
1
0.3
3
30
I
C
/I
B
=1000
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=5V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=1000
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
10ms
t=1ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SB1502
R
th(t)
-- t
10
3
10
2
10
2
1
10
1
10
10
3
10
4
0.1
1
10
100
1000
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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