Transistors
1
2SB1678
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
Low collector to emitter saturation voltage V
CE(sat)
Large Peak collector current I
CP
Mini power type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-30
V
Collector to emitter voltage
V
CEO
-20
V
Emitter to base voltage
V
EBO
-7
V
Peak collector current
I
CP
-5
A
Collector current
I
C
-3
A
Collector power dissipation
*
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -10 V, I
E
= 0
-100
nA
Emitter cutoff current
I
EBO
V
EB
= -5 V, I
C
= 0
-100
nA
Collector to emitter voltage
V
CEO
I
C
= -1 mA, I
B
= 0
-20
V
Emitter to base voltage
V
EBO
I
E
= -10 A, I
C
= 0
-7
V
Forward current transfer ratio
*1, 2
h
FE
V
CE
= -2 V, I
C
= 200 mA
90
625
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= -3 A, I
B
= - 0.1 A
-1
V
Collector output capacitance
C
ob
V
CB
= -20 V, I
E
= 0, f = 1 MHz
85
pF
Transition frequency
f
T
V
CB
=
-6 V, I
E
= 50 mA, f = 200 MHz
120
MHz
I Electrical Characteristics T
a
= 25C 3C
Marking Symbol: 2K
1: Emitter
2: Collector
3: Base
MiniP3 Type Package
Note) *: Printed circuit board copper foil for collector portion
area: 1.0 Cm
2
or more, thickness: 1.7 mm
Absolute maximum rating P
C
Without heat sink shall be 0.5 W
4.5
0.1
3.0
0.15
45
2.6
0.1
0.4 max.
1.6
0.2
1.5
0.1
4.0
2.5
0.1
3
+0.25 0.20
1.0
+0.1 0.2
0.5
0.08
0.4
0.04
0.4
0.08
3
2
1
1.5
0.1
3
Note) *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
h
FE
90 to 135
120 to 205
180 to 625
Please read the following notes before using the datasheets
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2001 MAR
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