1
Transistor
2SB642
Silicon PNP epitaxial planer type
For low-power general amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
400
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
80
3.5
max
1
1
460
1
Unit
nA
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
2
Transistor
2SB642
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
20
16
4
12
8
0
60
50
40
30
20
10
Ta=25C
I
B
=300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
450
150
300
0
60
50
40
30
20
10
V
CE
=5V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
1.8
0.6
1.2
0
400
300
100
250
350
200
50
150
V
CE
=5V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
240
200
160
120
80
40
V
CE
=5V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
8
6
2
5
7
4
1
3
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
3
Transistor
2SB642
0
30
25
20
5
15
10
0
6
5
4
3
2
1
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
0.01
0.1
1
10
0.03
0.3
3
0
6
5
4
3
2
1
V
CB
=5V
f=1kHz
R
g
=2k
Ta=25C
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0.1
0.3
1
3
10
0
20
16
12
8
4
18
14
10
6
2
V
CB
=5V
R
g
=50k
Ta=25C
f=100Hz
10kHz
1kHz
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0.1
0.3
1
3
10
1
300
100
30
10
3
V
CE
=5V
f=270Hz
Ta=25C
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
!
10
4
)
Emitter current I
E
(mA)
h Parameter
1
3
10
30
100
1
300
100
30
10
3
I
E
=2mA
f=270Hz
Ta=25C
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
!
10
4
)
Collector to emitter voltage V
CE
(V)
h Parameter
0
150
125
100
25
75
50
1
100
10
30
3
V
CB
=10V
Ambient temperature Ta (C)
I
CBO
(Ta
)
I
CBO
(Ta=25C
)
C
re
-- V
CE
NF -- I
E
NF -- I
E
h Parameter -- I
E
h Parameter -- V
CE
I
CBO
-- Ta
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