1
Transistor
2SC1215
Silicon NPN epitaxial planer type
For high-frequency (VHF band) amplification and oscillation
s
Features
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO92
EIAJ:SC43A
5.0
0.2
4.0
0.2
5.1
0.2
13.5
0.5
0.45
+0.2
0.1
0.45
+0.2
0.1
1.27
1.27
2.3
0.2
2.54
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
3
50
400
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Transition frequency
Power gain
Base time constant
Symbol
V
CBO
V
EBO
h
FE
V
BE
V
CE(sat)
C
re
f
T
*
PG
r
bb
' C
C
Conditions
I
C
=100
A, I
E
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 10V, I
E
= 2mA
V
CB
= 10V, I
E
= 2mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 15mA, f = 100MHz
V
CB
= 10V, I
E
= 1mA, f = 100MHz
V
CB
= 10V, I
E
= 10mA, f = 450kHz
min
30
3
25
600
typ
0.72
0.1
1
1200
20
max
1.5
1600
25
Unit
V
V
V
V
pF
MHz
dB
ps
*
f
T
Rank classification
Rank
T
S
f
T
(MHz)
600 ~ 1300
900 ~ 1600
2
Transistor
2SC1215
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
re
-- V
CE
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
24
20
16
12
8
4
Ta=25C
I
B
=300
A
50
A
100
A
150
A
200
A
250
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
450
150
300
0
24
20
16
12
8
4
V
CE
=10V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
1.8
0.6
1.2
0
400
300
100
250
350
200
50
150
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
1600
1200
400
1000
1400
800
200
600
Ta=25C
V
CE
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
3
Transistor
2SC1215
Z
rb
-- I
E
PG -- I
E
NF -- I
E
b
ib
-- g
ib
b
rb
-- g
rb
b
fb
-- g
fb
b
ob
-- g
ob
0.1
0.3
1
3
10
0
120
100
80
60
40
20
f=2MHz
Ta=25C
V
CE
=6V
10V
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
0.1
1
10
100
0.3
3
30
0
40
30
10
25
35
20
5
15
f=100MHz
R
g
=50
Ta=25C
V
CE
=10V
6V
Emitter current I
E
(mA)
Power gain PG
(dB
)
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
V
CE
=10V
f=100MHz
R
g
=50k
Ta=25C
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0
50
40
10
30
20
60
0
10
20
30
40
50
y
rb
=g
rb
+jb
rb
V
CB
=10V
f=900MHz
I
E
=2mA
5mA
300
500
600
200
Input conductance g
ib
(mS)
Input susceptance b
ib
(mS
)
1.0
0
0.2
0.8
0.4
0.6
2.4
0
0.4
0.8
1.2
1.6
2.0
y
rb
=g
rb
+jb
rb
V
CB
=10V
f=900MHz
I
E
=5mA
2mA
300
500
600
200
Reverse transfer conductance g
rb
(mS)
Reverse transfer susceptance b
rb
(mS
)
60
40
20
40
0
20
0
48
40
32
24
16
8
y
fb
=g
fb
+jb
fb
V
CB
=10V
f=200MHz
I
E
=5mA
2mA
300
500
600
900
Forward transfer conductance g
fb
(mS)
Forward transfer susceptance b
fb
(mS
)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
y
ob
=g
ob
+jb
ob
V
CE
=10V
f=200MHz
I
E
=2mA
5mA
300
500
600
900
Output conductance g
ob
(mS)
Output susceptance b
ob
(mS
)
PDF 
ZIP