1
Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Satisfactory operation performances and high efficiency with a
low-voltage power supply.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC51
TO92L Package
5.9
0.2
2.54
0.15
0.7
0.1
4.9
0.2
8.6
0.2
0.7
+0.3
0.2
13.5
0.5
3.2
0.45
+0.2
0.1
1.27
1.27
0.45
+0.2
0.1
1
3
2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
5
1.5
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
BE(sat)
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 25V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 500mA
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 1A, I
B
= 50mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
5
90
50
typ
100
150
12
max
100
1
330
1.2
0.5
20
Unit
nA
A
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
90 ~ 155
130 ~ 220
185 ~ 330
*2
Pulse measurement
2
Transistor
2SC1518
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
I
C
-- I
B
V
BE(sat)
-- I
C
I
C
-- V
BE(sat)
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
=5.0mA
4.5mA
4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Ta=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0
5
4
1
3
2
0
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
V
CE
=2V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0
1.0
0.8
0.2
0.6
0.4
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
Ta=25C
I
C
/I
B
=20 10
Base to emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
3
Transistor
2SC1518
I
CBO
-- Ta
I
CEO
-- Ta
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
4
V
CB
=25V
Ambient temperature Ta (C)
I
CBO
(Ta
)
I
CBO
(Ta=25C
)
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
5
10
4
V
CE
=20V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.01
10
1
0.1
0.03
0.3
3
Single pulse
Ta=25C
t=50ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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