1
Transistor
2SC2647
Silicon NPN epitaxial planer type
For high-frequency amplification
s
Features
q
Optimum for RF amplification, oscillation, mixing, and IF of FM/
AM radios.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Transition frequency
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
f
T
C
re
Z
rb
Conditions
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 10V, I
E
= 1mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 1mA
min
30
20
5
70
150
typ
230
1.3
max
250
1.6
60
Unit
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 160
110 ~ 250
2
Transistor
2SC2647
P
C
-- Ta
I
C
-- V
CE
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
C
re
-- V
CE
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
12
10
8
6
4
2
Ta=25C
I
B
=100
A
80
A
60
A
40
A
20
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.8
0.6
1.2
0
120
100
80
60
40
20
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
Ta=25C
V
CB
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
80
60
20
50
70
40
10
30
f=2MHz
Ta=25C
V
CB
=6V
10V
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
0.1
1
10
100
0.3
3
30
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
3
Transistor
2SC2647
C
ob
-- V
CB
b
ie
-- g
ie
b
re
-- g
re
b
fe
-- g
fe
b
oe
-- g
oe
1
3
10
30
100
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
20
16
4
12
8
0
12
10
8
6
4
2
y
ie
=g
ie
+jb
ie
V
CE
=10V
f=0.45MHz
1mA
2mA
4mA
7mA
58
25
10.7
100
I
E
= 0.4mA
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
3.0
0
0.5
1.0
1.5
2.0
2.5
y
re
=g
re
+jb
re
V
CE
=10V
f=0.45MHz
I
E
=7mA
2mA
4mA
1mA
0.4mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
y
fe
=g
fe
+jb
fe
V
CE
=10V
I
E
=7mA
4mA
2mA
0.1mA
0.4mA
1mA
0.45
0.45
10.7
10.7
f=10.7MHz
25
25
25
58
100
100
100
100
58
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
f=0.45MHz
I
E
= 0.1mA
7mA
4mA
2mA
1mA
0.4mA
58
10.7
25
100
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)
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