Transistors
1
Publication date: February 2003
SJC00134BED
2SC3704
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Features
Low noise figure NF
High forward transfer gain S
21e
2
High transition frequency f
T
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 15 V, I
E
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1 V, I
C
= 0
1
A
Forward current transfer ratio
h
FE1
V
CE
= 8 V, I
C
= 20 mA
50
150
300
h
FE2
V
CE
= 1 V, I
C
= 3 mA
80
280
Transition frequency
f
T
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz
6
GHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.7
1.2
pF
(Common base, input open circuited)
Forward transfer gain
S
21e
2
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz
13
dB
Maximum unilateral power gain
G
UM
V
CE
= 8 V, I
C
= 20 mA, f = 0.8 GHz
14
dB
Noise figure
NF
V
CE
= 8 V, I
C
= 7 mA, f = 0.8 GHz
1.0
1.7
dB
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 2W
2SC3704
2
SJC00134BED
V
CE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
G
UM
I
C
NF
I
C
0
160
40
120
80
0
240
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
12
10
8
2
6
4
0
60
50
40
30
20
10
T
a
= 25C
350
A
300
A
250
A
200
A
150
A
100
A
50
A
I
B
= 400 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
= 8 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/ I
B
= 10
T
a
= 75C, 25C, -25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
0.1
1
10
100
0
600
500
400
300
200
100
V
CE
= 8 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0
12
10
8
6
4
2
V
CE
= 8 V
f
= 0.8 GHz
T
a
= 25C
Transition frequency f
T
(GHz
)
Collector current I
C
(mA)
0.1
1
10
100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1
1
10
100
0
24
20
16
12
8
4
V
CE
= 8 V
f
= 0.8 GHz
T
a
= 25C
Maximum unilateral power gain G
UM
(dB
)
Collector current I
C
(mA)
0.1
1
10
100
0
6
5
4
3
2
1
V
CE
= 8 V
(R
g
= 50 )
f
= 800 MHz
T
a
= 25C
Noise figure NF
(dB
)
Collector current I
C
(mA)
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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