Power Transistors
1
Publication date: March 2003
SJD00113AED
2SC3824, 2SC3824A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Features
High-speed switching
High collector-base voltage (Emitter open) V
CBO
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
900
V
Collector-emitter voltage (E-B short)
V
CES
900
V
Collector-emitter voltage 2SC3824
V
CEO
800
V
(Base open)
2SC3824A
900
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
1
A
Peak collector current
I
CP
2
A
Collector power
P
C
15
W
dissipation
T
a
= 25C
1.3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SC3824
V
CEO
I
C
= 1 mA, I
B
= 0
800
V
(Base open)
2SC3824A
900
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 900 V, I
E
= 0
50
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 7 V, I
C
= 0
50
A
Forward current transfer ratio
h
FE1
V
CE
= 5 V, I
C
= 0.05 A
6
h
FE2
V
CE
= 5 V, I
C
= 0.5 A
3
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 0.2 A, I
B
= 0.04 A
1.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 0.2 A, I
B
= 0.04 A
1.0
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.05 A, f = 1 MHz
4
MHz
Turn-on time
t
on
I
C
= 0.2 A
1.0
s
Storage time
t
stg
I
B1
= 0.04 A, I
B2
= - 0.08 A
3.0
s
Fall time
t
f
V
CC
= 250 V
1.0
s
7.0
0.3
3.5
0.2
0 to 0.15
12.6
0.3
7.2
0.3
2.5
0.2
2.5
0.2
(1.0)
(1.0)
1.0
0.2
3.0
0.2
2.0
0.2
1.1
0.1
0.75
0.1
0.9
0.1
0 to 0.15
0.4
0.1
2.3
0.2
4.6
0.4
1
2
3
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
2SC3824, 2SC3824A
2
SJD00113AED
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
t
on
, t
stg
, t
f
I
C
Safe operation area
0
0
160
40
120
80
5
15
10
20
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
(1)
(2)
(1)T
C
=Ta
(3)Without heat sink
(P
C
=1.3W)
0
0
12
2
10
4
8
6
1.2
1.0
0.8
0.6
0.4
0.2
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25C
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
100mA
I
B
=200mA
0.01
0.1
1
0.01
0.1
1
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=5
25C
25C
T
C
=100C
0.01
0.01
0.1
1
0.1
1
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=5
T
C
=25C
25C
100C
0.01
1
0.1
0.1
1
10
100
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=5V
T
C
=100C
25C
25C
10
-3
10
-2
10
-1
1
0.1
1
10
100
1 000
Collector current I
C
(A)
Transition frequency f
T
(MHz)
V
CE
=10V
f=1MHz
T
C
=25C
0.01
0.1
1
10
100
0
1.0
0.8
0.6
0.4
0.2
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
t
stg
t
f
t
on
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=I
B2
)
V
CC
=250V
T
C
=25C
1
10
100
1 000
10
-3
10
-2
10
-1
1
10
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
I
CP
t=300ms
t=10ms
t=1ms
I
C
Non repetitive pulse
T
C
=25C
2SC3824A
2SC3824
0
0
12
2
10
4
8
6
1.2
1.0
0.8
0.6
0.4
0.2
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25C
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
100mA
I
B
=200mA
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
PDF 
ZIP