1
Transistor
2SC3904
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
s
Features
q
High transition frequency f
T
.
q
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
JEDEC:TO236
2:Emitter
EIAJ:SC59
3:Collector
Mini Type Package
2.8
+0.2
0.3
1.5
+0.25
0.05
0.65
0.15
0.65
0.15
3
1
2
0.95
0.95
1.9
0.2
0.4
+0.1
0.05
1.1
+0.2
0.1
0.8
0.4
0.2
0 to 0.1
0.16
+0.1
0.06
1.45
0.1 to 0.3
2.9
+0.2
0.05
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
65
200
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 0.8GHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 20mA, f = 1.5GHz
V
CE
= 8V, I
C
= 7mA, f = 1.5GHz
min
50
7.0
7
typ
120
8.5
0.6
9
10
2.2
max
1
1
300
1
3
Unit
A
A
GHz
pF
dB
dB
dB
Marking symbol :
3S
2
Transistor
2SC3904
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
GUM -- I
C
NF -- I
C
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
30
25
20
15
10
5
Ta=25C
200
A
150
A
100
A
50
A
I
B
=250
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=8V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=8V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
12
10
8
6
4
2
V
CB
=8V
f=1.5GHz
Ta=25C
Collector current I
C
(mA)
Transition frequency f
T
(GHz
)
1
3
10
30
100
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
6
5
4
3
2
1
V
CE
=8V
f=1.5GHz
Ta=25C
Collector current I
C
(mA)
Noise figure NF
(dB
)
0.1
1
10
100
0.3
3
30
0
12
10
8
6
4
2
V
CE
=8V
f=1.5GHz
Ta=25C
Collector current I
C
(mA)
Maximum unilateral power gain GUM
(dB
)
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