1
Transistor
2SC3929, 2SC3929A
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SA1531 and 2SA1531A
s
Features
q
Low noise voltage NV.
q
High foward current transfer ratio h
FE
.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
5
100
50
150
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SC3929
2SC3929A
2SC3929
2SC3929A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Noise voltage
Transition frequency
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
NV
f
T
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 5V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
V
CB
= 5V, I
E
= 2mA, f = 200MHz
min
35
55
35
55
5
180
typ
0.7
80
max
100
1
700
0.6
1
150
Unit
nA
A
V
V
V
V
V
mV
MHz
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
2SC3929
SR
SS
ST
2SC3929A
TR
TS
TT
Marking symbol :
S
(2SC3929)
T
(2SC3929A)
Unit: mm
1:Base
2:Emitter
EIAJ:SC70
3:Collector
SMini Type Package
2.1
0.1
1.3
0.1
0.9
0.1
0.7
0.1
0.3
+0.1
0
0.15
+0.1
0.05
2.0
0.2
1.25
0.1
0.425
0.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2
0.1
Marking
Symbol
2SC3929
2SC3929A
2SC3929
2SC3929A
2
Transistor
2SC3929, 2SC3929A
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
NV -- V
CE
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
160
120
40
100
140
80
20
60
Ta=25C
I
B
=350
A
300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
0.5
0.4
0.1
0.3
0.2
0
160
120
40
100
140
80
20
60
V
CE
=5V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=5V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
720
600
480
360
240
120
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
500
400
300
200
100
V
CB
=5V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
0
20
16
12
8
4
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
3
10
30
100
0
160
120
40
100
140
80
20
60
I
C
=1mA
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
3
Transistor
2SC3929, 2SC3929A
NV -- V
CE
NV -- I
C
NV -- I
C
NV -- R
g
NV -- R
g
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
1
3
10
30
100
0
300
240
120
180
60
I
C
=1mA
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
0.01
0.03
0.1
0.3
1
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
0.01
0.03
0.1
0.3
1
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
1
3
10
30
100
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
1
3
10
30
100
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
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