Power Transistors
1
Publication date: January 2003
SJD00117BED
2SC3944, 2SC3944A
Silicon NPN epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SA1535 and 2SA1535A
Features
Excellent collector current I
C
characteristics of forward current
transfer ratio h
FE
High transition frequency f
T
A complementary pair with 2SA1535 and 2SA1535A, is optimum
for the driver stage of a 60 W to 100 W output amplifier
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SC3944
V
CBO
150
V
(Emitter open)
2SC3944A
180
Collector-emitter voltage 2SC3944
V
CEO
150
V
(Base open)
2SC3944A
180
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power
T
C
= 25C
P
C
15
W
dissipation
2.0
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SC3944
V
CEO
I
C
= 1 mA, I
B
= 0
150
V
(Base open)
2SC3944A
180
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
5
V
Collector-base cutoff current
2SC3944
I
CBO
V
CB
= 150 V, I
E
= 0
10
A
(Emitter open)
2SC3944A
V
CB
= 180 V, I
E
= 0
10
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 150 mA
65
160
330
h
FE2
V
CE
= 5 V, I
C
= 500 mA
50
100
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.5
2.0
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
1.0
2.0
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 50 mA, f = 10 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
30
50
pF
(Common base, input open circuited)
Rank
P
Q
R
S
h
FE1
65 to 110
90 to 155
130 to 220
185 to 330
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
2SC3944, 2SC3944A
2
SJD00117BED
P
C
T
a
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
Safe operation area
0
5
10
15
20
25
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
160
40
120
80
(1)
(2)
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2W)
0.01
0.1
1
0.01
10
1
0.1
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
25C
25C
T
C
=100C
0.01
0.01
0.1
1
1
0.1
10
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
T
C
=25C
25C
100C
0.01
0.1
1
1
1 000
100
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=10V
T
C
=100C
25C
25C
0
100
300
200
400
-0.01
-0.1
-1
Transition frequency f
T
(MHz)
Emitter current I
E
(A)
V
CB
=10V
f=10MHz
T
C
=25C
1
10
100
0
100
80
60
40
20
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0.001
1
0.01
0.1
1
10
10
100
1 000
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
Single pulse
T
C
=25C
t=10ms
t=<50s
2SC3944A
2SC3944
DC
I
CP
I
C
t=1ms
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2002 JUL
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