Power Transistors
1
2SC4212
2SC4212
2SC4212
2SC4212
2SC4212
Silicon NPN triple diffusion planar type
For color TV horizontal deflection driver
I Features
High collector to emitter voltage V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T
C
= 25C
1 : Emitter
2 : Collector
3 : Base
TO-126B Package
Unit: mm
I Electrical Characteristics T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
350
V
Collector to emitter voltage
V
CEO
300
V
Emitter to base voltage
V
EBO
7.5
V
Peak collector current
I
CP
400
mA
Collector current
I
C
200
mA
Collector power dissipation
P
C
1.2
*1
W
5
*2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 200 V, I
E
= 0
2
A
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
2
A
Collector to base voltage
V
CBO
I
C
= 100
A, I
E
= 0
350
V
Collector to emitter voltage
V
CEO
I
C
= 5 mA, I
B
= 0
300
V
Emitter to base voltage
V
EBO
I
E
= 100
A, I
C
= 0
7.5
V
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 10 mA
40
250
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA
1
V
Transition frequency
f
T
V
CB
= 30 V, I
E
=
-10 mA, f = 200 MHz
50
MHz
Collector output capacitance
C
ob
V
CB
= 50 V, I
E
= 0, f = 1 MHz
4.5
pF
Note) *1: Without heat sink
*2: With a 100 100 2 mm A1 heat sink
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Power Transistors
2
2SC4212
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
I
C
V
BE
C
ob
V
CB
Area of safe operation (ASO)
0
6
5
4
3
2
1
0
200
40
80
160
120
180
20
60
140
100
(1)With a 100
1002mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(W
)
0
20
4
8
16
12
0
40
80
120
200
160
T
C
=25C
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
I
B
=2.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
0
2.0
1.6
1.2
0.8
0.4
240
200
160
120
80
40
V
CE
=10V
T
C
=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
3
10
30
100
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=10
25C
25C
T
C
=100C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
3
30
1
1000
100
10
3
30
300
V
CE
=10V
T
C
=100C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100 300 1000
0
40
80
120
200
160
V
CB
=30V
f=200MHz
T
C
=25C
Emitter current I
E
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
20
16
12
8
4
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.001
0.003
1
3
0.01
0.03
0.1
0.3
1
3
10
10
30
100
300
1000
Single pulse
T
C
=25C
t=10ms
t=1s
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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2001 MAR
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