1
Transistor
2SC4787
Silicon NPN epitaxial planer type
For intermediate frequency amplification
s
Features
q
High transition frequency f
T
.
q
Satisfactory linearity of forward current transfer ratio h
FE
.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT1 Type Package
6.9
0.1
1.05
0.05
2.5
0.1
3.5
0.1
14.5
0.5
(1.45)
0.8
0.7
4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
0.05
0.45
+0.1
0.05
2.5
0.5
2.5
0.5
2.5
0.1
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
600
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Common emitter reverse transfer capacitance
Power gain
Transition frequency
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
C
re
PG
f
T
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 10V, I
C
= 10mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 10mA, f = 58MHz
V
CB
= 10V, I
E
= 10mA, f = 100MHz
min
45
35
4
20
18
300
typ
50
500
max
0.1
100
0.5
1.5
Unit
A
V
V
V
V
pF
dB
MHz
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
2
Transistor
2SC4787
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
C
re
-- V
CE
PG -- I
E
0
160
40
120
80
140
20
100
60
0
800
600
200
500
700
400
100
300
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
10
8
2
6
4
0
80
60
20
50
70
40
10
30
I
B
=2.0mA
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
120
100
80
60
40
20
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
3.0
2.5
2.0
1.5
1.0
0.5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
3
10
30
100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1mA
f=10.7MHz
Ta=25C
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
0.1
1
10
100
0.3
3
30
0
30
25
20
15
10
5
V
CB
=10V
f=58MHz
Ta=25C
Emitter current I
E
(mA)
Power gain PG
(dB
)
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