1
Power Transistors
2SC4960, 2SC4960A
Silicon NPN triple diffusion planar type
For power switching
s
Features
q
High-speed switching
q
High collector to base voltage V
CBO
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to emitter voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
900
900
900
800
900
7
2
1
0.3
40
3
150
55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
2SC4960
2SC4960A
2SC4960
2SC4960A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= 0.08A,
V
CC
= 250V
min
800
900
6
3
typ
4
max
50
50
1.5
1
1
3
1
Unit
A
A
V
V
V
MHz
s
s
s
2SC4960
2SC4960A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP3 Full Pack Package(a)
15.0
0.3
21.0
0.5
16.2
0.5
12.5
Solder Dip
3.5
0
.7
15.0
0.2
5.0
0.2
11.0
0.2
10.9
0.5
5.45
0.3
3
2
1
1.1
0.1
2.0
0.2
0.6
0.2
2.0
0.1
3.2
0.1
3.2
2
Power Transistors
2SC4960, 2SC4960A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C
=25C
90mA
80mA
70mA
60mA
50mA
40mA
30mA
20mA
10mA
100mA
I
B
=200mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=5
25C
25C
T
C
=100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.03
0.1
0.3
1
0.01
3
1
0.3
0.1
0.03
I
C
/I
B
=5
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.1
0.3
1
3
10
30
100
V
CE
=5V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.001
0.01
0.1
1
0.003
0.03
0.3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0
1.0
0.8
0.2
0.6
0.4
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(2I
B1
=I
B2
)
V
CC
=250V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
10
1
0.1
0.03
0.3
3
I
CP
I
C
Non repetitive pulse
T
C
=25C
2SC4960
2SC4960A
DC
10ms
t=1ms
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SC4960, 2SC4960A
Area of safe operation, reverse bias ASO
Reverse bias ASO measuring circuit
R
th(t)
-- t
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
0
1600
400
1200
800
1400
200
1000
600
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
I
CP
L
coil
=100
H
I
C
/I
B
=5
(I
B1
=I
B2
)
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
L coil
I
C
I
B1
V
in
t
W
I
B2
Vclamp
V
CC
T.U.T
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