Transistors
1
Publication date: February 2003
SJC00176BED
2SC5190
Silicon NPN epitaxial planar type
For low-voltage high-frequency amplification
Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 5 V, I
E
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1 V, I
C
= 0
1
A
Forward current transfer ratio
h
FE
V
CE
= 3 V, I
C
= 10 mA
40
100
160
Transition frequency
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 1.5 GHz
10
GHz
Collector output capacitance
C
ob
V
CB
= 3 V, I
E
= 0, f = 1 MHz
0.4
0.7
pF
(Common base, input open circuited)
Foward transfer gain
S
21e
2
V
CE
= 0.3 V, I
C
= 1 mA, f = 0.9 GHz
6.5
dB
Noise figure
NF
V
CE
= 0.3 V, I
C
= 1 mA, f = 0.9 GHz
1.7
dB
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
9
V
Collector-emitter voltage (Base open)
V
CEO
6
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 3Y
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
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and semiconductors described in this material
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2002 JUL
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