1
Power Transistors
2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s
Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
1500
1600
1500
1600
6
20
30
200
3.5
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SC5244
2SC5244A
2SC5244
2SC5244A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= 4.8A,
Resistance loaded
min
5
typ
3
1.5
0.12
max
1
1
50
12
3
1.5
2.5
0.2
Unit
mA
A
V
V
MHz
s
s
2SC5244
2SC5244A
Unit: mm
1:Base
2:Collector
3:Emitter
TOP3L Package
20.0
0.5
6.0
10.0
26.0
0.5
20.0
0.5
1.5
2.5
Solder Dip
10.9
0.5
1
2
3
2.0
0.3
3.0
0.3
1.0
0.2
5.0
0.3
3.0
4.0
2.0
5.45
0.3
0.6
0.2
1.5
2.7
0.3
1.5
2.0
3.3
0.2
3.0
2
Power Transistors
2SC5244, 2SC5244A
P
C
-- Ta
I
C
-- V
CE
h
FE
-- I
C
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
Area of safe operation, horizontal operation ASO
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
240
200
160
120
80
40
220
180
140
100
60
20
(1)
(3)
(2)
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
16
12
4
10
14
8
2
6
T
C
=25C
200mA
600mA
400mA
800mA
I
B
=1000mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.1
1
10
100
1000
T
C
=100C
25C
25C
V
CE
=5V
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=3.5
100C
25C
T
C
=25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.01
0.1
1
10
100
I
C
/I
B
=3.5
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0
2000
1600
400
1200
800
0
50
40
30
20
10
f=64kHz, T
C
=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
<1mA
2SC5244
2SC5244A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
0.01
0.1
1
10
1000
100
Note: R
th
was measured at Ta=25C and under natural convection
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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