Transistors
1
Publication date: December 2002
SJC00283BED
2SC5295J
Silicon NPN epitaxial planar type
For 2 GHz band low-noise amplification
Features
High transition frequency f
T
Low collector output capacitance (Common base, input open cir-
cuited) C
ob
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 1 V, I
C
= 0
1
A
Forward current transfer ratio
*
h
FE
V
CE
= 8 V, I
C
= 20 mA
50
170
Transition frequency
f
T
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7.0
8.5
GHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.6
1.0
pF
(Common base, input open circuited)
Foward transfer gain
S
21e
2
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
7
9
dB
Maximum unilateral power gain
G
UM
V
CE
= 8 V, I
C
= 15 mA, f = 1.5 GHz
10
dB
Noise figure
NF
V
CE
= 8 V, I
C
= 7 mA, f = 1.5 GHz
2.2
3.0
dB
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
65
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Marking Symbol: 3S
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE
50 to 120
100 to 170
0.27
0.02
3
1
2
0.12
+0.03
0.01
0.80
0.05
(0.80)
0.85
1.60
0.05
0 to 0.02
0.10 max.
0.70
+0.05 0.03
(0.375)
5
5
1.60
+0.05
0.03
1.00
0.05
(0.50)(0.50)
+0.05 0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
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2002 JUL
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