1
Transistor
2SC5335(Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
Low collector to emitter saturation voltage V
CE(sat)
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
0.1
4.5
0.1
14.5
0.5
2.5
0.5
2.5
0.5
2.5
0.1
6.9
0.1
1.05
0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
0.05
0.45
+0.1
0.05
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*1
T
j
T
stg
Ratings
60
50
15
1.5
0.7
1.0
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
15
400
typ
0.15
200
11
max
1
10
2000
0.4
15
Unit
A
A
V
V
V
V
MHz
pF
*1
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*1
h
FE
Rank classification
Rank
R
S
T
h
FE
400 ~ 800
600 ~ 1200 1000 ~ 2000
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
2
Transistor
2SC5335
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
2.0
1.6
1.2
0.8
0.4
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
90
A
80
A
70
A
60
A
50
A
40
A
30
A
20
A
10
A
I
B
=100
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
1800
1500
1200
900
600
300
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
3
10
30
100
0
24
20
16
12
8
4
f=1MHz
I
E
=0
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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