1
Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
s
Features
q
Low noise figure NF.
q
High gain.
q
High transition frequency f
T
.
q
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC70
3:Collector
SMini Type Package
2.1
0.1
1.3
0.1
0.9
0.1
0.7
0.1
0.3
+0.1
0
0.15
+0.1
0.05
2.0
0.2
1.25
0.1
0.425
0.425
1
3
2
0.65
0.2
0
.65
0 to 0.1
0.2
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
8
2
80
150
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
Symbol
I
CBO
I
EBO
h
FE
*1
C
ob
f
T
NF
| S
21e
|
2
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
min
80
8.5
typ
0.6
7
1.6
11
max
1
1
200
1
2
Unit
A
A
pF
GHz
dB
dB
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
80 ~ 115
95 ~ 155
135 ~ 200
Marking symbol :
HT
2
Transistor
2SC5378
P
C
-- Ta
I
C
-- V
CE
h
FE
-- I
C
0
160
40
120
80
140
20
100
60
0
200
160
120
80
40
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
10
8
2
6
4
0
120
100
80
60
40
20
I
B
=600
A
500
A
400
A
300
A
200
A
100
A
Ta=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0
180
150
120
90
60
30
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
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