Transistors
1
2SC5472
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
I Features
High transition frequency f
T
High gain of 8.2 dB and low noise of 1.8 dB at 3 V
Optimum for RF amplification of a portable telephone and pager
S-mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
9
V
Collector to emitter voltage
V
CEO
6
V
Emitter to base voltage
V
EBO
1
V
Collector current
I
C
30
mA
Collector power dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Marking Symbol: 3A
Unit: mm
2.1
0.1
1.3
0.1
0.3
+0.1
0.0
2.0
0.2
1.25
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
0.1
0.9
0.1
0 to 0.1
0.9
+0.2 0.1
0.15
+0.10
0.05
5
10
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 9 V, I
E
= 0
1
A
Emitter cutoff current
I
EBO
V
EB
= 1 V, I
C
= 0
1
A
Forward current transfer ratio
h
FE
V
CE
= 3 V, I
C
= 10 mA
80
200
Transition frequency
f
T
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
12.0
GHz
Collector output capacitance
C
ob
V
CB
= 3 V, I
E
= 0, f = 1 MHz
0.6
0.9
pF
Forward transfer gain
| S
21e
|
2
V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
6.0
8.0
dB
Noise figure
NF
V
CE
= 3 V, I
C
= 3 mA, f = 1.5 GHz
1.8
3.0
dB
I Electrical Characteristics T
a
= 25C 3C
1: Base
2: Emitter
EIAJ: SC-70
3: Collector
S-Mini Type Package
PDF 
ZIP