1
Power Transistors
2SC5513
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s
Features
q
High breakdown voltage, and high reliability through the use of a
glass passivation layer
q
High-speed switching
q
Wide area of safe operation (ASO)
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
1500
1500
600
5
20
11
3.5
40
3
150
55 to +150
Unit
V
V
V
V
A
A
A
W
C
C
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 5.5A
I
C
= 5.5A, I
B
= 1.38A
I
C
= 5.5A, I
B
= 1.38A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5.5A, I
B1
= 1.38A, I
B2
= 2.76A
min
5
typ
3
max
50
1
50
10
3
1.5
2.7
0.2
Unit
A
mA
A
V
V
MHz
s
s
Unit: mm
1:Base
2:Collector
3:Emitter
TOP3E Full Pack Package
15.5
0.5
26.5
0.5
22.0
0.5
23.4
18.6
0.5
3.3
0.3
5.5
0.3
2.0
0.7
0.1
2.0
2
.0
1.2
10.0
3.0
0.3
3.2
0.1
4.5
5.45
0.3
1
2
3
5.45
0.3
1.1
0.1
2.0
0.2
4.0
5
5
5
5
5
5
0.7
0.1
2
Power Transistors
2SC5513
P
C
-- Ta
Area of safe operation, horizontal operation ASO
0
160
40
120
80
140
20
100
60
0
100
80
60
40
20
90
70
50
30
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(1)
(2)
(3)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
2000
500
1500
1000
0
35
30
10
25
20
5
15
<1mA
f=64kHz, T
C
<90C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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