Transistors
1
2SC5592
Silicon NPN epitaxial planer type
For DC-DC converter
For various driver circuits
I Features
Low collector to emitter saturation voltage V
CE(sat)
, large current
capacitance
High-speed switching
Mini type 3-pin package, allowing downsizing and thinning of the
equipment.
Complementary pair with 2SA2010
I Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 10 V, I
E
= 0
0.1
A
Collector to base voltage
V
CBO
I
C
= 10 A, I
E
= 0
15
V
Collector to emitter voltage
V
CEO
I
C
= 1 mA, I
B
= 0
15
V
Emitter to base voltage
V
EBO
I
E
= 10 A, I
C
= 0
5
V
Forward current transfer ratio
*1
h
FE1
V
CE
= 2 V, I
C
= 100 mA
400
1 000
h
FE2
V
CE
= 2 V, I
C
= 2.5 A
280
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 1 A, I
B
= 10 mA
110
mV
I
C
= 2.5 A, I
B
= 50 mA
220
320
mV
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
30
pF
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA
180
MHz
f
= 200 MHz
Turn-on time
*2
t
on
30
ns
Storage time
*2
t
stg
100
ns
Fall time
*2
t
f
10
ns
I Electrical Characteristics T
a
= 25C 3C
Marking Symbol: 2T
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Note) *: Measure on the ceramic substrate at 15 15 0.6 mm
3
.
Note) *1: Rank classification (
1 ms)
*2: Refere to the measurement circuit.
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini Type Package (3-pin)
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
15
V
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
10
A
Collector current
I
C
2.5
A
Collector power dissipation
*
P
C
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
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