Transistors
1
2SC5609
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SA2021
I Features
High foward current transfer ratio h
FE
SSS-mini type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
7
V
Peak collector current
I
CP
200
mA
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
I
CEO
V
CE
= 10 V, I
B
= 0
100
A
Collector to base voltage
V
CBO
I
C
= 10 A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Forward current transfer ratio
h
FE1
V
CE
= 10 V, I
C
= 2 mA
180
390
h
FE2
V
CE
= 2 V, I
C
= 100 mA
90
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.1
0.3
V
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
3.5
pF
Transition frequency
f
T
V
CB
= 10 V, I
E
=
-2 mA, f = 200 MHz
80
MHz
I Electrical Characteristics T
a
= 25C 3C
Marking Symbol: 3F
1: Base
2: Emitter
3: Collector
SSS Mini Type Package (3-pin)
1.20
0.05
0.52
0.03
0 to 0.01
5
0.15 min.
0.80
0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5
0.80
0.05
1.20
0.05
+0.05
0.02
0.10
+0.05
0.02
0.23
+0.05
0.02
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2001 MAR
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