1
Publication date: December 2002
SJC00288AED
Transistors
Electrical Characteristics T
a
= 25C 3C
2SC5838
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
Features
Suitable for high-density mounting and downsizing of the equip-
ment for Ultraminiature leadless package
0.6 mm
1.0 mm (height 0.39 mm)
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
15
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 100 A, I
B
= 0
10
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 2 V, I
C
= 0
1
A
Forward current transfer ratio
h
FE
V
CE
= 8 V, I
C
= 20 mA
110
250
Forward transfer gain
S
21e
2
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz
7.5
10.0
dB
Noise figure
NF
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz
1.7
dB
Maximum unilateral power gain
G
UM
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz
11.5
dB
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.9
1.2
pF
(Common base, input open circuited)
Transition frequency
f
T
V
CE
= 8 V, I
C
= 20 mA, f = 800 MHz
5.0
6.0
GHz
Unit: mm
0.60
0.05
1.00
0.05
2
1
3
0.39
+0.01
-0.03
0.25
0.05
0.25
0.05
0.50
0.05
0.65
0.01
0.15
0.05
2
1
0.35
0.01
0.05
0.03
0.05
0.03
3
Marking symbol: 1F
1: Base
2: Emitter
3: Collector
ML3-N2 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
2
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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and semiconductors described in this material
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2002 JUL
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