Power Transistors
1
Publication date: March 2004
SJD00307AED
2SC5909
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Features
High breakdown voltage: V
CBO
1 500 V
High-speed switching: t
f
< 200 ns
Wide safe operation area
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 1 000 V, I
E
= 0
50
A
V
CB
= 1 500 V, I
E
= 0
1
mA
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 7 V, I
C
= 0
50
A
Forward current transfer ratio
h
FE
V
CE
= 5 V, I
C
= 7.5 A
5
10
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 7.5 A, I
B
= 1.88 A
2.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 7.5 A, I
B
= 1.88 A
1.5
V
Transition frequency
f
T
V
CE
= 10 V, I
C
= 0.1 A, f = 0.5 MHz
3
MHz
Storage time
t
stg
I
C
= 7.5 A, Resistance loaded
2.7
s
Fall time
t
f
I
B1
= 1.88 A, I
B2
= -3.75 A
0.2
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
1 500
V
Collector-emitter voltage (E-B short)
V
CES
1 500
V
Collector-emitter voltage (Base open)
V
CEO
600
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Base current
I
B
5
A
Collector current
I
C
15
A
Peak collector current
*
I
CP
25
A
Collector power dissipation
P
C
50
W
T
a
= 25C
3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
15.5
0.5
3.0
0.3
(4.0)
2.0
0.2
1.1
0.1
5.45
0.3
0.7
0.1
5
5
5
5
5
10.9
0.5
1
5
2
3
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
0.3
5.5
0.3
(2.0)
26.5
0.5
(23.4)
22.0
0.5
18.6
0.5
(2.0)
3.2
0.1
(4.5)
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Note) *: Non-repetitive peak collector current
Internal Connection
B
C
E
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
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information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP
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