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Электронный компонент: 2SC5926

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Power Transistors
1
Publication date: November 2004
SJD00326AED
2SC5926
Silicon NPN triple diffusion planar type
For power amplification
Features
High forward current transfer ratio h
FE
which has satisfactory linearity.
Low collector-emitter saturation voltage V
CE(sat)
Allowing supply with the radial taping
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 10 mA, I
B
= 0
60
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 80 V, I
E
= 0
100
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 40 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 6 V, I
C
= 0
100
A
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 4 V, I
C
= 0.5 A
500
2 300
h
FE2
V
CE
= 4 V, I
C
= 3 A
100
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 1 A, I
B
= 20 mA
0.7
V
Turn-on time
t
on
I
C
= 1 A, Resistance loaded
0.2
s
Storage time
t
stg
I
B1
= 0.1 A, I
B2
= - 0.1 A
1.5
s
Fall time
t
f
V
CC
= 50 V
0.1
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
80
V
Collector-emitter voltage (Base open)
V
CEO
60
V
Emitter-base voltage (Collector open)
V
EBO
6
V
Collector current
I
C
3
A
Peak collector current
I
CP
6
A
Collector power dissipation
P
C
15
W
T
a
= 25C
2.0
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
h
FE1
500 to 1 500
1 300 to 2 300
10.0
0.2
0.65
0.1
0.35
0.1
2.5
0.2
1
2
3
0.65
0.1
1.2
0.1
1.48
0.2
2.25
0.2
C 1.0
0.55
0.1
0.55
0.1
2.5
0.2
1.05
0.1
13.0
0.2
4.2
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.5
0.1
90
1.0
0.2
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Note) *: Non-repetitive peak collector current
Internal Connection
B
C
E
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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hold appliances).
Consult our sales staff in advance for information on the following applications:
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modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
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2003 SEP