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Электронный компонент: 2SC5939

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Transistors
1
Publication date: April 2004
SJC00306AED
2SC5939
Silicon NPN epitaxial planar type
For high-frequency amplification/oscillation/mixing
Features
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
and reverse transfer capacitance (Common base) C
rb
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
15
V
Collector-emitter voltage (Base open)
V
CEO
10
V
Emitter-base voltage (Collector open)
V
EBO
3
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
10
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
3
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0
1
A
Forward current transfer ratio
h
FE
V
CE
= 4 V, I
C
= 5 mA
75
400
h
FE
ratio
h
FE
V
CE
= 4 V, I
C
= 100 A
0.75
1.6
V
CE
= 4 V, I
C
= 5 mA
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 20 mA, I
B
= 4 mA
0.5
V
Transition frequency
f
T
V
CE
= 4 V, I
E
= -5 mA, f = 200 MHz
1.4
1.9
2.7
GHz
Collector output capacitance
C
ob
V
CB
= 4 V, I
E
= 0, f = 1 MHz
1.4
pF
(Common base, input open circuited)
Reverse transfer capacitance
C
rb
V
CB
= 4 V, I
E
= 0, f = 1 MHz
0.45
pF
(Common base)
Collector-base parameter
r
bb
' C
C
V
CB
= 4 V, I
E
= -5 mA, f = 31.9 MHz
11
ps
Electrical Characteristics T
a
= 25C 3C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
1.20
0.05
0.52
0.03
0 to 0.01
0.15 max.
5
0.15 min.
0.80
0.05
0.15 min.
0.33
(0.40)
(0.40)
1
2
3
5
0.80
0.05
1.20
0.05
+0.05
0.02
0.10
+0.05
0.02
0.23
+0.05
0.02
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Marking Symbol: 1S
Unit: mm
2SC5939
2
SJC00306AED
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW)
0
140
60
20
120
100
40
80
0
120
40
100
80
20
60
0
12
10
8
2
6
4
0
50
30
35
40
45
25
20
15
10
5
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
I
B
= 500 A
T
a
= 25C
400 A
300 A
100 A
200 A
0
0
0.2
0.4
0.6
0.8
1.2
1
50
40
30
20
10
Base-emitter voltage V
BE
(V)
Collector current I
C
(m
A
)
V
CE
= 4 V
T
a
= 85C
-25C
25
C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
1
0.1
0.01
0.1
1
10
25
C
T
a
= 85C
-25C
I
C
/I
B
= 5
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0
140
120
100
80
60
40
20
V
CE
= 4 V
T
a
= 85C
-25C
25
C
0
2
4
6
8
10
12
14
16
1
10
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
f
= 1 MHz
T
a
= 25C
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2003 SEP