Transistors
1
Publication date: November 2002
SJC00195BED
2SD0662, 2SD0662B
(2SD662, 2SD662B)
Silicon NPN epitaxial planar type
For high breakdown voltage general amplification
Features
High collector-emitter voltage (Base open) V
CEO
High transition frequency f
T
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
6.9
0.1
2.5
0.1
(1.0)
(1.0)
(1.5)
(0.85)
0.45
0.05
0.55
0.1
(2.5)
(2.5)
2
1
3
R 0.7
R 0.9
(0.4)
3.5
0.1
4.5
0.1
4.1
0.2
2.4
0.2
1.25
0.05
2.0
0.2
1.0
0.1
(1.5)
Unit: mm
1: Base
2: Collector
3: Emitter
M-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
h
FE
30 to 100
60 to 150
100 to 220
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0662
V
CBO
250
V
(Emitter open)
2SD0662B
400
Collector-emitter voltage 2SD0662
V
CEO
200
V
(Base open)
2SD0662B
400
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
70
mA
Collector power dissipation
P
C
600
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SD0662
V
CEO
I
C
= 100 A, I
B
= 0
200
V
(Base open)
2SD0662B
400
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
5
V
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 100 V, I
B
= 0
2
A
Forward current transfer ratio
h
FE
*
V
CE
= 10 V, I
C
= 5 mA
30
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 50 mA, I
B
= 5 mA
1.2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -10 mA, f = 200 MHz
50
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
10
pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
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and semiconductors described in this material
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2002 JUL
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