Power Transistors
1
Publication date: May 2003
SJD00164BED
2SD0946
(2SD946)
, 2SD0946A
(2SD946A)
,
2SD0946B
(2SD946B)
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
Features
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
A shunt resistor is omitted from the driver.
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SD0946
V
CBO
30
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage 2SD0946
V
CEO
25
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SD0946
V
CBO
I
C
= 100 A, I
E
= 0
30
V
(Emitter open)
2SD0946A
60
2SD0946B
100
Collector-emitter voltage
2SD1263
V
CEO
I
C
= 1 mA, I
B
= 0
25
V
(Base open)
2SD0946A
50
2SD0946B
80
Emitter-base voltage (Collector open)
V
EBO
I
E
= 100 A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
0.1
A
Forward current transfer ratio
*1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A
4 000
40 000
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA
1.8
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA
2.2
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
150
MHz
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
B
200
C
E
2SD0946, 2SD0946A, 2SD0946B
2
SJD00164BED
h
FE
I
C
C
ob
V
CB
P
C
T
a
V
CE(sat)
I
C
V
BE(sat)
I
C
0
0
160
40
120
80
0.4
1.2
0.8
1.6
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
Without heat sink
1
0.1
0.01
0.01
0.1
1
10
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=1000
T
C
=25C
25C
100C
0.01
1
0.1
0.01
0.1
1
10
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=1000
25C
100C
T
C
=25C
0.01
1
0.1
10
2
10
3
10
4
10
5
Forward current transfer ratio h
FE
Collector current I
C
(A)
T
C
=100C
25C
25C
V
CE
=10V
0
1
24
20
16
12
8
4
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
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2002 JUL
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