1
Power Transistors
2SB939, 2SB939A
Silicon PNP epitaxial planar type Darlington
For midium-speed power switching
Complementary to 2SD1262 and 2SD1262A
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
7
12
8
45
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SB939
2SB939A
2SB939
2SB939A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4A, I
B
= 8mA
I
C
= 4A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= 8mA,
V
CC
= 50V
min
60
80
2000
500
typ
15
0.5
2
1
max
100
100
2
10000
1.5
2
Unit
A
mA
V
V
V
MHz
s
s
s
2SB939
2SB939A
2SB939
2SB939A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
2000 to 5000 4000 to 10000
Internal Connection
B
C
E
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
0.2
6.0
0.5
10.0
0.3
10.5min.
2.0
1.5
0.1
1.5max.
0.8
0.1
5.08
0.5
2.54
0.3
1.1max.
0.5max.
1.0
0.1
3.4
0.3
2
1
3
Unit: mm
8.5
0.2
4.4
0.5
2.0
10.0
0.3
14.7
0.5
4.4
0.5
6.0
0.3
3.4
0.3
2.54
0.3
5.08
0.5
1.0
0.1
0.8
0.1
1.5
+0
0.4
3.0
+0.4
0.2
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
2
Power Transistors
2SB939, 2SB939A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 50
50
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
5
4
1
3
2
0
8
6
2
5
7
4
1
3
1.8mA
1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
T
C
=25C
I
B
=2.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
0.3
3
0.1
100
10
1
0.3
3
30
I
C
/I
B
=500
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
0.3
3
0.1
100
10
1
0.3
3
30
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25C
(1)
(2)
(3)
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
0.3
3
0.1
100
10
1
0.3
3
30
I
C
/I
B
=500
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
0.3
3
0.1
100
10
1
0.3
3
30
(1)
(2)
(3)
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
0.3
3
10
2
10
5
10
4
10
3
V
CE
=3V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
10ms
t=1ms
I
CP
I
C
300ms
2SB939A
2SB939
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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