1
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
Silicon NPN triple diffusion planar type
For power amplification
s
Features
q
High collector to base voltage V
CBO
q
High-speed switching
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
150
200
250
150
200
250
80
6
5
40
2
150
55 to +150
Unit
V
V
V
V
A
W
C
C
2SD1274
2SD1274A
2SD1274B
2SD1274
2SD1274A
2SD1274B
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Fall time
Symbol
I
CBO
V
CEO(sus)
*
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
t
f
Conditions
V
CB
= 150V, I
E
= 0
V
CB
= 200V, I
E
= 0
V
CB
= 250V, I
E
= 0
I
C
= 0.2A, L = 25mH
I
E
= 1mA, I
C
= 0
V
CE
= 4V, I
C
= 5A
V
CE
= 4V, I
C
= 5A
I
C
= 5A, I
B
= 1A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 5A, I
B1
= 0.8A, V
EB
= 5V
min
80
6
14
typ
40
max
1
1
1
1.5
1.6
1
Unit
mA
V
V
V
V
MHz
s
2SD1274
2SD1274A
2SD1274B
*
V
CEO(sus)
Test circuit
X
L 25mH
15V
1
Y
G
6V
120
60Hz
I
C
(A)
0.2
0.1
80
V
CE
(V)
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
I
B
=45mA
5mA
10mA
15mA
20mA
25mA
30mA
35mA
40mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
8
6
2
5
7
4
1
3
T
C
=100C
25C
25C
V
CE
=4V
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
320
80
240
160
0
20
16
12
8
4
18
14
10
6
2
<1mA
f=15.75kHz, T
C
=25C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SD1274, 2SD1274A, 2SD1274B
R
th(t)
-- t
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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