1
Transistor
2SD1450
Silicon NPN epitaxial planer type
For low-frequency amplification
s
Features
q
Optimum for high-density mounting.
q
Allowing supply with the radial taping.
q
Low collector to emitter saturation voltage V
CE(sat)
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (Ta=25C)
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC72
3:Base
New S Type Package
4.0
0.2
marking
2.54
0.15
1.27
1.27
3.0
0.2
15.6
0.5
2.0
0.2
0.7
0.1
0.45
0.1
1
2
3
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
300
150
55 ~ +150
Unit
V
V
V
A
A
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 20mA
*2
I
C
= 500mA, I
B
= 20mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
200
60
typ
0.13
200
10
0.6
max
100
800
0.4
1.2
Unit
nA
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
=
!
1000(
)
f=1kHz
V=0.3V
1k
V
A
V
V
V
A
V
B
V
B
2
Transistor
2SD1450
P
C
-- Ta
I
C
-- V
CE
V
BE(sat)
-- I
C
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
NV -- I
C
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
2.4
2.0
1.6
1.2
0.8
0.4
Ta=25C
I
B
=4.0mA
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=25
25C
25C
Ta=75C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
1200
1000
800
600
400
200
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
400
300
100
250
350
200
50
150
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
20
16
12
8
4
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.01
0.03
0.1
0.3
1
0
120
100
80
60
40
20
V
CE
=10V
G
V
=80dB
Function=FLAT
5k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
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