1
Power Transistors
2SD1480
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1052
s
Features
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
q
Low collector to emitter saturation voltage V
CE(sat)
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
60
6
4
2
25
2
150
55 to +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 0.1A
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 1A
I
C
= 2A, I
B
= 0.2A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 0.1A,
V
CC
= 50V
min
60
35
70
typ
20
0.2
3.5
0.7
max
200
300
1
250
1.2
2
Unit
A
A
mA
V
V
V
MHz
s
s
s
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
70 to 150
120 to 250
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220 Full Pack Package(a)
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
4.0
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.25
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
2
Power Transistors
2SD1480
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
150
125
100
25
75
50
0
40
30
10
25
35
20
5
15
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2.0W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
5
4
3
2
1
T
C
=25C
I
B
=100mA
80mA
50mA
40mA
30mA
20mA
10mA
5mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.0
2.5
2.0
0.5
1.5
1.0
0
6
5
4
3
2
1
V
CE
=4V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
2
(1) Without heat sink
(2) With a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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