1
Power Transistors
2SD1748, 2SD1748A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplification
Complementary to 2SB1178 and 2SB1178A
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
4
2
15
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1748
2SD1748A
2SD1748
2SD1748A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
B
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 2A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 2A, I
B1
= 8mA, I
B2
= 8mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
1
1
2
2
2
10000
2.8
2.5
Unit
mA
mA
mA
V
V
V
MHz
s
s
s
2SD1748
2SD1748A
2SD1748
2SD1748A
2SD1748
2SD1748A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000 4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
0.3
7.0
0.3
3.0
0.2
3.5
0.2
10.0
+0.3
0.
0.8
0.2
1.0
0.2
4.6
0.4
2
1
3
1.1
0.1
0.75
0.1
2.3
0.2
0.85
0.1
0.4
0.1
7.0
0.3
0.75
0.1
2.3
0.2
4.6
0.4
1.1
0.1
10.2
0.3
7.2
0.3
2.0
0.2
0.9
0.1
3.5
0.2
2.5
0.2
1.0
1.0
2.5
0.2
3.0
0.2
1.0 max.
1
2
3
0 to 0.15
0 to 0.15
2.5
0.5 max.
2
Power Transistors
2SD1748, 2SD1748A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
6
5
4
1
3
2
0
5
4
3
2
1
T
C
=25C
I
B
=2.0mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=4V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
100C
25C
T
C
=25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=4V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
1ms
300ms
2SD1748
2SD1748A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
1
1
10
10
2
10
3
(1) Without heat sink
(2) With a 50
50
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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