1
Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type Darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
s
Features
q
High foward current transfer ratio h
FE
q
High-speed switching
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
7
12
8
15
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1750
2SD1750A
2SD1750
2SD1750A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 4A
V
CE
= 3V, I
C
= 8A
I
C
= 4V, I
B
= 8mA
I
C
= 4V, I
B
= 8mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 8mA, I
B2
= 8mA
min
60
80
2000
500
typ
20
0.5
4
1
max
100
100
2
10000
1.5
2
Unit
A
mA
V
V
V
MHz
s
s
s
2SD1750
2SD1750A
2SD1750
2SD1750A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
2000 to 5000 4000 to 10000
Internal Connection
B
E
C
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7.2
0.3
7.0
0.3
3.0
0.2
3.5
0.2
10.0
+0.3
0.
0.8
0.2
1.0
0.2
4.6
0.4
2
1
3
1.1
0.1
0.75
0.1
2.3
0.2
0.85
0.1
0.4
0.1
7.0
0.3
0.75
0.1
2.3
0.2
4.6
0.4
1.1
0.1
10.2
0.3
7.2
0.3
2.0
0.2
0.9
0.1
3.5
0.2
2.5
0.2
1.0
1.0
2.5
0.2
3.0
0.2
1.0 max.
1
2
3
0 to 0.15
0 to 0.15
2.5
0.5 max.
2
Power Transistors
2SD1750, 2SD1750A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=1.3W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
5
4
1
3
2
0
12
10
8
6
4
2
I
B
=4.0mA
T
C
=25C
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=500
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
(1) I
C
/I
B
=250
(2) I
C
/I
B
=500
(3) I
C
/I
B
=1000
T
C
=25C
(3)
(2)
(1)
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
30
10
1
0.3
3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=500
25C
100C
T
C
=25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.1
1
10
100
0.3
3
30
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=3V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=10ms
1ms
300ms
2SD1750
2SD1750A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
1
1
10
10
2
10
3
(1) Without heat sink
(2) With a 50
50
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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