1
Power Transistors
2SD1771, 2SD1771A
Silicon NPN triple diffusion planar type
For power amplification
For TV vertical deflection output
Complementary to 2SB1191 and 2SB1191A
s
Features
q
High collector to emitter V
CEO
q
Large collector power dissipation P
C
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
200
200
150
180
6
2
1
25
1.3
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1771
2SD1771A
2SD1771
2SD1771A
T
C
=25
C
Ta=25
C
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
60 to 140
100 to 240
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 5mA, I
B
= 0
I
E
= 0.5mA, I
C
= 0
V
CE
= 10V, I
C
= 100mA
V
CE
= 10V, I
C
= 300mA
V
CE
= 10V, I
C
= 300mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 100mA, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
150
180
6
60
50
typ
20
27
max
50
50
240
1
1
Unit
A
A
V
V
V
V
MHz
pF
2SD1771
2SD1771A
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
0.2
6.0
0.5
10.0
0.3
10.5min.
2.0
1.5
0.1
1.5max.
0.8
0.1
5.08
0.5
2.54
0.3
1.1max.
0.5max.
1.0
0.1
3.4
0.3
2
1
3
Unit: mm
8.5
0.2
4.4
0.5
2.0
10.0
0.3
14.7
0.5
4.4
0.5
6.0
0.3
3.4
0.3
2.54
0.3
5.08
0.5
1.0
0.1
0.8
0.1
1.5
+0
0.4
3.0
+0.4
0.2
0 to 0.4
1.1 max.
R0.5
R0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
2
Power Transistors
2SD1771, 2SD1771A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
40
30
10
25
35
20
5
15
(1) T
C
=Ta
(2) With a 50
50
2mm
Al heat sink
(3) Without heat sink
(P
C
=1.3W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
24
20
16
4
12
8
0
1.6
1.2
0.4
1.0
1.4
0.8
0.2
0.6
I
B
=20mA
T
C
=25C
10mA
8mA
6mA
4mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
1.6
0.4
1.2
0.8
0
4
3
1
2
T
C
=100C
25C
25C
V
CE
=10V
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
1
3
10
30
100
300
1000
V
CE
=10V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=0.5ms
10ms
1ms
300ms
2SD1771
2SD1771A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
2
(1) Without heat sink
(2) With a 50
50
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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