1
Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1317 and 2SB1317A
s
Features
q
Satisfactory foward current transfer ratio h
FE
collector current I
C
characteristics
q
Wide area of safe operation (ASO)
q
High transition frequency f
T
q
Optimum for the output stage of a HiFi audio amplifier
s
Absolute Maximum Ratings
(T
C
=25C)
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 180V, I
E
= 0
V
CB
= 200V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 8A
V
CE
= 5V, I
C
= 8A
I
C
= 10A, I
B
= 1A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
60
20
typ
20
200
max
50
50
50
200
1.8
2.5
Unit
A
A
V
V
MHz
pF
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
60 to 120
80 to 160
100 to 200
Unit: mm
1:Base
2:Collector
3:Emitter
TOP3L Package
20.0
0.5
6.0
10.0
26.0
0.5
20.0
0.5
1.5
2.5
Solder Dip
10.9
0.5
1
2
3
2.0
0.3
3.0
0.3
1.0
0.2
5.0
0.3
3.0
4.0
2.0
5.45
0.3
0.6
0.2
1.5
2.7
0.3
1.5
2.0
3.3
0.2
3.0
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
180
200
180
200
5
25
15
150
3.5
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SD1975
2SD1975A
2SD1975
2SD1975A
T
C
=25
C
Ta=25
C
2SD1975
2SD1975A
2
Power Transistors
2SD1975, 2SD1975A
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
200
150
50
100
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.5W)
(1)
(3)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
24
20
16
12
8
4
I
B
=1000mA
T
C
=25C
800mA
700mA
600mA
500mA
400mA
300mA
200mA
100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
4
1
3
2
0
24
20
16
12
8
4
V
CE
=5V
T
C
=25C
25C
100C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.1
1
10
100
0.3
3
30
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
1
1000
100
10
3
30
300
V
CE
=5V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
10
10000
1000
100
30
300
3000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t=10ms
100ms
DC
I
CP
I
C
2SD1975
2SD1975A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
3
Power Transistors
2SD1975, 2SD1975A
R
th(t)
-- t
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
0.1
1
10
100
10000
1000
Note: R
th
was measured at Ta=25C and under natural convection.
(1) P
T
=10V
0.3A (3W) and without heat sink
(2) P
T
=10V
1.0A (10W) and with a 100
100
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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