Transistors
1
2SD1994A
Silicon NPN epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SB1322A
I Features
Low collector to emitter saturation voltage V
CE(sat)
Output of 2 W to 3 W is obtained with a complementary pair with
2SB1322A
Allowing supply with the radial taping
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
50
V
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
1.5
A
Collector current
I
C
1
A
Collector power dissipation
*
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector to base voltage
V
CBO
I
C
= 10 A, I
E
= 0
60
V
Collector to emitter voltage
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
Emitter to base voltage
V
EBO
I
E
= 10 A, I
C
= 0
5
V
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= 10 V, I
C
= 500 mA
85
340
h
FE2
V
CE
= 5 V, I
C
= 1 A
50
100
Collector to emitter saturation voltage
*1
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.2
0.4
V
Base to emitter saturation voltage
*1
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.85
1.2
V
Transition frequency
*1
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
11
20
pF
I Electrical Characteristics T
a
= 25C 3C
Unit: mm
2.5
0.1
4.5
0.1
14.5
0.5
2.5
0.5 2.50.5
2.5
0.1
6.9
0.1
1.05
0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
-0.05
0.45
+
0.1
-
0.05
3
2
1
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
-
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT2 Type Package
Rank
Q
R
S
No-rank
h
FE1
85 to 170
120 to 240
170 to 340
85 to 340
Note) *1: Pulse measurement
*2: Rank classification
Product of no-rank is not classified and have no indication for rank.
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
2SD1994A
Transistors
2
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(W
)
0
0
10
2
4
8
6
1.50
1.25
1.00
0.75
0.50
0.25
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
B
= 10 mA
T
a
= 25C
0
1.2
1.0
0.8
0.6
0.4
0.2
0
12
2
10
4
8
6
Base current I
B
(mA)
V
CE
= 10 V
T
a
= 25C
Collector current
I
C
(A
)
0.001
0.003
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
Collector to emitter saturation voltage
V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
25
C
-25C
T
a
= 100C
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
Base to emitter saturation voltage
V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/ I
B
= 10
T
a
= -25C
25
C
100
C
0.01
0.1
1
10
0.03
0.3
3
0
100
200
300
500
400
T
a
= 100C
25
C
-25C
Forward current transfer ratio h
FE
V
CE
= 10 V
Collector current I
C
(A)
-1
-3
-10
-30
-100
-2
-20
-5
-50
0
40
80
120
200
160
20
60
100
180
140
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
= 10 V
T
a
= 25C
0
1
60
50
40
30
20
10
3
10
30
100
Collector output capacitance C
ob
(
pF
)
Collector to base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25C
0.1
0.3
1
3
10
30
100
0
120
100
80
60
40
20
Collector to emitter voltage V
CER
(V
)
Base to emitter resistance R
BE
(k
)
I
C
= 10 mA
T
a
= 25C
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