Transistors
1
Publication date: April 2003
SJC00240BED
2SD2067
Silicon NPN epitaxial planar type
For low-frequency output amplification
Features
Darlington connection
High forward current transfer ratio h
FE
Large peak collector current I
CP
High collector-emitter voltage (Base open) V
CEO
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
120
V
Collector-emitter voltage (Base open)
V
CEO
100
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
2
A
Peak collector current
I
CP
3
A
Collector power dissipation
*
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 100 A, I
E
= 0
120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 1 mA, I
B
= 0
100
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 100 A, I
C
= 0
5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 25 V, I
E
= 0
0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 4 V, I
C
= 0
1
A
Forward current transfer ratio
*1, 2
h
FE
V
CE
= 10 V, I
C
= 1 A
4 000
40 000
Collector-emitter saturation voltage
*1
V
CE(sat)
I
C
= 1 A, I
B
= 1 mA
1.5
V
Base-emitter saturation voltage
*1
V
BE(sat)
I
C
= 1 A, I
B
= 1 mA
2
V
Electrical Characteristics T
a
= 25C 3C
Unit: mm
6.9
0.1
2.5
0.1
0.45
1.05
0.05
2.5
0.5
1
2
3
2.5
0.5
+0.10
0.05
0.45
+0.10
0.05
(0.8)
(0.5)
(1.0)
(1.0)
4.5
0.1
14.5
0.5
4.0
0.7
0.65 max.
(0.2)
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
2SD2067
2
SJC00240BED
V
BE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
Safe operation area
0
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
0
10
8
2
6
4
0
3.0
2.5
2.0
1.5
1.0
0.5
T
a
= 25C
I
B
= 180 A
30
A
60
A
90
A
120
A
150
A
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0.01
10
1
0.1
0.01
0.1
1
10
I
C
/ I
B
= 1000
T
a
= 100C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
0.01
10
1
0.1
0.1
1
10
100
I
C
/ I
B
= 1000
T
a
= -25C
25
C
100
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
0.01
0.1
1
10
10
5
10
10
2
10
4
10
3
V
CE
= 10 V
T
a
= 100C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
1
10
100
0
60
50
40
30
20
10
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1
1
10
100
0.001
0.01
0.1
1
10
Single pulse
T
a
= 25C
t
= 10 ms
t
= 1 s
I
CP
I
C
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
PDF 
ZIP