1
Power Transistors
2SD2139
Silicon NPN triple diffusion planar type
For high-current amplification ratio, power amplification
s
Features
q
High foward current transfer ratio h
FE
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Allowing supply with the radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
6
6
3
1
15
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
500
typ
50
max
100
100
100
2500
1
Unit
A
A
A
V
V
MHz
*
h
FE
Rank classification
Rank
Q
P
O
h
FE
500 to 1000 800 to 1500 1200 to 2500
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
0.2
0.55
0.1
2.5
0.2
2.5
0.2
4.2
0.2
13.0
0.2
2.5
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.25
0.2
1.2
0.1
0.65
0.1
0.55
0.1
C1.0
90
C1.0
1 2 3
1.05
0.1
0.35
0.1
2
Power Transistors
2SD2139
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
T
C
=25C
I
B
=1.6mA
1.4mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
=4V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
10000
1000
100
30
300
3000
V
CE
=4V
25C
25C
T
C
=100C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
1000
100
10
3
30
300
V
CE
=12V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t=10ms
1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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