1
Transistor
2SD2258 (Tentative)
Silicon NPN epitaxial planer type
For low-frequency output amplification
s
Features
q
Darlington connection.
q
High foward current transfer ratio h
FE
.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
0.1
4.5
0.1
14.5
0.5
2.5
0.5
2.5
0.5
2.5
0.1
6.9
0.1
1.05
0.05
(1.45)
4.0
0.7
0.8
0.15
0.5
0.2
1.0
1.0
0.65 max.
0.45
+0.1
0.05
0.45
+0.1
0.05
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
60
50
5
1.5
1
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 45V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
A, I
C
= 0
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
*2
I
C
= 1A, I
B
= 1mA
*2
V
CB
= 10V, I
E
= 50mA, f = 200MHz
min
60
50
5
4000
typ
150
max
0.1
0.1
40000
1.8
2.2
Unit
A
A
V
V
V
V
V
MHz
*1
h
FE
Rank classification
Rank
Q
R
S
h
FE
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
Internal Connection
B
C
E
200
2
Transistor
2SD2258
P
C
-- Ta
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
0
200
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=1000
Ta=25C
25C
100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=1000
Ta=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
10
2
10
3
10
4
10
5
V
CE
=10V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
24
20
16
12
8
4
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
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