1
Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
s
Features
q
High-speed switching
q
Satisfactory linearity of foward current transfer ratio h
FE
q
Allowing supply with the radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
7
8
4
1
15
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 4A
I
C
= 4A, I
B
= 0.4A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
I
C
= 4A, I
B1
= 0.4A, I
B2
= 0.4A,
V
CC
= 50V
min
60
70
20
typ
80
0.3
1.0
0.2
max
100
100
320
2.0
1.5
Unit
A
A
V
V
V
MHz
s
s
s
*
h
FE1
Rank classification
Rank
Q
P
O
h
FE1
70 to 150
120 to 250
160 to 320
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
0.2
0.55
0.1
2.5
0.2
2.5
0.2
4.2
0.2
13.0
0.2
2.5
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.25
0.2
1.2
0.1
0.65
0.1
0.55
0.1
C1.0
90
C1.0
1 2 3
1.05
0.1
0.35
0.1
2
Power Transistors
2SD2266
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
8
2
6
4
7
1
5
3
0
4
3
1
2
I
B
=40mA T
C
=25C
35mA
30mA
25mA
20mA
15mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
4
1
3
2
0
6
5
4
3
2
1
V
CE
=4V
T
C
=25C
25C
100C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
10
10
2
10
3
10
4
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
1
10
100
1000
V
CE
=12V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
1
10
100
1000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
8
2
6
4
7
1
5
3
0.01
0.1
1
10
100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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