1
Power Transistors
2SD2375
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s
Features
q
High forward current transfer ratio h
FE
which has satisfactory
linearity
q
Full-pack package which can be installed to the heat sink with
one screw
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
6
6
3
1
25
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE
*
V
CE(sat)
f
T
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
min
60
500
typ
50
max
100
100
100
1500
1
Unit
A
A
A
V
V
MHz
*
h
FE
Rank classification
Rank
Q
P
h
FE
500 to 1000 800 to 1500
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
TO220D Full Pack Package
1
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
4.6
0.2
2.9
0.2
0.8
0.1
1.4
0.2
2
3
3.2
0.1
2.6
0.1
0.55
0.15
2.54
0.3
5.08
0.5
3.0
0.5
1.6
0.2
Note: Ordering can be made by the common rank (PQ rank h
FE
= 500 to 1500) in the rank classification.
2
Power Transistors
2SD2375
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
Area of safe operation (ASO)
R
th(t)
-- t
0
160
40
120
80
140
20
100
60
0
40
32
24
16
8
36
28
20
12
4
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
1.0
0.8
0.6
0.4
0.2
T
C
=25C
I
B
=1.0mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.9mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
5
4
3
2
1
V
CE
=5V
T
C
=25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=4V
T
C
=25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=12V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1) Without heat sink
(2) With a 100
80
2mm Al heat sink
(1)
(2)
Time t (s)
Thermal resistance R
th
(t)
(C/W
)
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